- 您现在的位置：买卖IC网 > PDF目录371438 > 29F016-12 (Macronix International Co., Ltd.) 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY PDF资料下载
参数资料
| 型号： | 29F016-12 |
| 厂商： | Macronix International Co., Ltd. |
| 英文描述： | 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 1,600位[2米x 8]的CMOS平等部门闪存 |
| 文件页数： | 10/37页 |
| 文件大小： | 888K |
| 代理商： | 29F016-12 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页当前第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
10
P/N:PM0590
REV. 1.4, NOV. 21, 2002
MX29F016
ERASE SUSPEND
This command only has meaning while the state machine
is executing Automatic Sector Erase operation, and
therefore will only be responded during Automatic Sector
Erase operation. However, When the Erase Suspend
command is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready. At this time,
state machine only allows the command register to
respond to the Read Memory Array, Erase Resume and
program commands.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend
program operation is complete, the system can once
again read array data within non-suspended blocks.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions.Another Erase Suspend command can
be written after the chip has resumed erasing.
SET-UP AUTOMATIC PROGRAM
COMMANDS
To initiate Automatic Program mode, A three-cycle
command sequence is required. There are two "unlock"
write cycles. These are followed by writing the Automatic
Program command A0H.
Once the Automatic Program command is initiated, the
next WE pulse causes a transition to an active
programming operation. Addresses are latched on the
falling edge, and data are internally latched on therising
edge of the WE pulse. The rising edge of WE also begins
the programming operation. The system is not required
to provide further controls or timings. The device will
automatically provide an adequate internally generated
program pulse and verify margin.
If the program opetation was unsuccessful, the data on
Q5 is "1"(see Table 4), indicating the program operation
exceed internal timing limit. The automatic programming
operation is completed when the data read on Q6 stops
toggling for two consecutive read cycles and the data on
Q7 and Q6 are equivalent to data written to these two
bits, at which time the device returns to the Read
mode(no program verify command is required).
DATA POLLING-Q7
The MX29F016 also features Data Polling as a method
to indicate to the host system that the Automatic Program
or Erase algorithms are either in progress or completed.
While the Automatic Programming algorithm is in
operation, an attempt to read the device will produce the
complement data of the data last written to Q7. Upon
completion of the Automatic Program Algorithm an
attempt to read the device will produce the true data last
written to Q7. The Data Polling feature is valid after the
rising edge of the fourth WE pulse of the four write pulse
sequences for automatic program.
While the Automatic Erase algorithm is in operation, Q7
will read "0" until the erase operation is competed. Upon
completion of the erase operation, the data on Q7 will
read "1". The Data Polling feature is valid after the rising
edge of the sixth WE pulse of six write pulse sequences
for automatic chip/sector erase.
The Data Polling feature is active during Automatic
Program/Erase algorithm or sector erase time-out.(see
section Q3 Sector Erase Timer)
相关PDF资料 |
PDF描述 |
|---|---|
| 29F016-90 | 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F022B-12 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022B-120 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022B-55 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
| 29F022B-70 | 2M-BIT[256K x 8]CMOS FLASH MEMORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 29F016-90 | 制造商:MCNIX 制造商全称:Macronix International 功能描述:16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F016D70E4D | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F016D-70E4D | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29F020 | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 29F022B-12 | 制造商:MCNIX 制造商全称:Macronix International 功能描述:2M-BIT[256K x 8]CMOS FLASH MEMORY |
发布紧急采购，3分钟左右您将得到回复。