参数资料
型号: 29F016-12
厂商: Macronix International Co., Ltd.
英文描述: 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
中文描述: 1,600位[2米x 8]的CMOS平等部门闪存
文件页数: 15/37页
文件大小: 888K
代理商: 29F016-12
15
P/N:PM0590
REV. 1.4, NOV. 21, 2002
MX29F016
ABSOLUTE MAXIMUM RATINGS
RATING
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & OE
VALUE
-40
o
C to 85
o
C
-65
o
C to 125
o
C
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional
operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended period may affect reliability.
NOTICE:
Specifications contained within the following tables are
subject to change.
READ TIMING WAVEFORMS
NOTES:
1. VIL min. = -0.6V for pulse width is equal to or less than
20ns.
2. If VIH is over the specified maximum value, programming
operation cannot be guranteed.
3. ICCES is specified with the device de-selected. If the
device is read during erase suspend mode, current draw is
the sum of ICCES and ICC1 or ICC2.
4. All current are in RMS unless otherwise noted.
DC CHARACTERISTICS (TA = -40
o
C to 85
o
C, VCC = 5V
±
10%)
SYMBOL
ICC1 (Read)
ICC2
ICC3 (Program)
ICC4 (Erase)
ICCES
PARAMETER
Operating VCC Current
MIN.
TYP
MAX.
30
50
50
50
UNIT
mA
mA
mA
mA
mA
CONDITIONS
IOUT=0mA, f=1MHz
IOUT=0mA, F=10MHz
In Programming
In Erase
CE=VIH, Erase Suspended
VCC Erase Suspend Current
2
COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION
Addresses
CE
OE
tACC
WE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
HIGH Z
HIGH Z
DATA Valid
tOE
tDF
tCE
Outputs
tOH
ADD Valid
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