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参数资料
| 型号： | 2N3501DCSMG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 150 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 封装： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件页数： | 2/2页 |
| 文件大小： | 23K |
| 代理商： | 2N3501DCSMG4 |
2N3501DCSM
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4059
Issue 1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
1
IC=10mA
IB=0
150
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC=10A
IE=0
150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=10A
IC=0
6
V
I
CBO
Collector Cutoff Current
VCB=75V
IE=0
0.05
Tamb=150°C
50
A
I
EBO
Emitter Cutoff Current
VBE(off)=4V
VCE=0
25
nA
ON CHARACTERISTICS
IC=0.1mA
VCE=10V
35
IC=1mA
VCE=10V
50
IC=10 mA
VCE=10V
75
IC=150 mA
VCE=10V
100
300
hFE
DC Current Gain
IC=300 mA
VCE=10V
20
IC=10mA
IB=1mA
0.2
IC=50mA
IB=5mA
0.25
VCE(SAT)
Collector-Emitter Saturation Voltage
1
IC=150 mA
IB=15mA
0.4
V
IC=10mA
IB=1mA
0.8
IC=50mA
IB=5mA
0.9
VBE(SAT)
Base-Emitter Saturation Voltage
1
IC=150 mA
IB=15mA
1.2
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(100MHz)
VCE=20V
IC=20mA
150
MHz
Cobo
Output Capacitance (1MHz)
VCB=10V
IE=0
8
Cibo
Input Capacitance (1MHz)
VEB=0.5V
IC=0
80
pF
hie
Input Impedance (1kHz)
VCE=10V
IC=10mA
0.25
1.25
`
hfe
Small-Signal Current Gain (1kHz)
VCE=10V
IC=10mA
375
hoe
Output Admittance (1kHz)
VCE=10V
IC=10mA
200
`
SWITCHING CHARACTERISTICS
td
Delay Time
IC=150mA
IB
1=15mA
20
tr
Rise Time
VCC=100V
VEB(off)=-2V
35
ts
Storage Time
IC=150mA
IB
1=15mA
800
tf
Fall Time
IB1=IB2=15mA
80
ns
1) Pulse Test: Pulse Width < 300s, Duty Cycle <2%
2) ft is defined as frequency at which |hfe|.ftest
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3501L | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3501LJX | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3501LJ | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3501UB | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N3501 | 500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3501JAN | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
| 2N3501JANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
| 2N3501JANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
| 2N3501JANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
| 2N3501JX | 制造商:Motorola 功能描述:2N3501 MOT'87 N10D9H |
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