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参数资料
| 型号： | 2SA2080MDTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-70, CMPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 166K |
| 代理商： | 2SA2080MDTL-E |
2SA2080
Rev.1.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–30
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–30
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–5
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
–0.5
A
VCB = –20 V, IE = 0
Emitter cutoff current
IEBO
–0.5
A
VEB = –2 V, IC = 0
DC current transfer ratio
hFE*
1
160
500
VCE = –12 V, IC = –2 mA
Collector to emitter saturation voltage
VCE(sat)
–0.2
V
IC = –10 mA, IB = –1 mA
Base to emitter voltage
VBE
–0.75
V
VCE = –12 V, IC = –2 mA
Notes: 1. The 2SA2080 is grouped by hFE as follows.
Grade
C
D
Mark
MC
MD
hFE
160 to 320
250 to 500
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相关代理商/技术参数 |
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|---|---|
| 2SA2081 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA2081CCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081CDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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