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参数资料
| 型号： | 2SB1018A-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-10R1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 173K |
| 代理商： | 2SB1018A-O |
2SB1018A
2005-02-02
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications
Power Amplifier Applications
High collector current: IC = 7 A
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A)
Complementary to 2SD1411A
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
7
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1020A | 7 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SB1025-DJ | SMALL SIGNAL TRANSISTOR |
| 2SB1025DH | SMALL SIGNAL TRANSISTOR |
| 2SB1025-DK | SMALL SIGNAL TRANSISTOR |
| 2SB1025 | SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1018AY | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SB1018A-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, TOSH, TO220, 7A, 80V |
| 2SB1019 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1020 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1020A | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) |
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