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参数资料
| 型号： | 2SC5198 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-16C1A, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 122K |
| 代理商： | 2SC5198 |
2SC5198
2006-11-10
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 140 V, IE = 0
―
5.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
140
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
―
160
DC current gain
hFE (2)
VCE = 5 V, IC = 5 A
35
83
―
Collector-emitter saturation voltage
VCE (sat)
IC = 7 A, IB = 0.7 A
―
0.3
2.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 5 A
―
0.9
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
30
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
170
―
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
C5198
TOSHIBA
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5198_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Power Amplifier Applications |
| 2SC5198O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 10A I(C) | TO-247VAR |
| 2SC5198-O(Q) | 功能描述:两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5198-O(Q,T) | 功能描述:两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5198-O(S1,X,S) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR |
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