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参数资料
| 型号： | 2SK1070PIDTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | SC-50A, MPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 58K |
| 代理商： | 2SK1070PIDTL-E |
2SK1070
Rev.2.00, Mar.14.2005, page 2 of 4
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate cutoff current
IGSS
—
–10
nA
VGS = –15 V, VDS = 0
Gate to source breakdown voltage
V(BR)GSS
–22
—
V
IG = –10
A, VDS = 0
Drain current
IDSS*
1
12
—
40
mA
VDS = 5 V, VGS = 0, Pulse test
Gate to source cutoff voltage
VGS(off)
0
—
–2.5
V
VDS = 5 V, ID = 10
A
Forward transfer admittance
|yfs|
20
30
—
mS
VDS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
9
—
pF
VDS = 5 V, VGS = 0, f = 1 MHz
Notes: 1. The 2SK1070 is grouped by IDSS as follows.
Grade
C
D
E
Mark
PIC
PID
PIE
IDSS
12 to 22
18 to 30
27 to 40
Main Characteristics
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(mA)
20
16
12
8
4
0
–1.25
–1.0
–0.5
–0.25
0
–0.75
VDS = 5 V
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (mA)
Forward
Transfer
Admittance
y
fs
(mS)
VDS = 5 V
f = 1 kHz
100
10
1.0
0.1
1.0
10
100
0
50
100
150
Ambient Temperature Ta (C)
Channel
Power
Dissipation
Pch
(mW)
150
100
50
Maximum Channel Dissipation Curve
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(mA)
20
16
12
8
4
02
6
8
10
4
VGS = 0 V
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1070PIDTL-H | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel Junction FET |
| 2SK1070PIETL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel Junction FET |
| 2SK1070PIETL-H | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel Junction FET |
| 2SK1078 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1079 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 600MA I(D) | TO-243 |
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