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参数资料
| 型号： | 2SK2008 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PFM, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 50K |
| 代理商： | 2SK2008 |
2SK2008
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
250
V
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
20
A
Drain peak current
I
D(pulse)*
1
80
A
Body to drain diode reverse drain current
I
DR
20
A
Channel dissipation
Pch*
2
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2009TE85R | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2010 | 4 A, 250 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2011 | 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2014 | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2015 | 3000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2008-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2009 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| 2SK2009(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 30V 0.2A 3-Pin S-Mini Bulk |
| 2SK2009(TE85L) | 制造商:Toshiba America Electronic Components 功能描述:200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2009(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
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