参数资料
型号: 2SK2200
元件分类: JFETs
英文描述: 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-8M1B, 3 PIN
文件页数: 2/6页
文件大小: 413K
代理商: 2SK2200
2SK2200
2009-12-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 2 A
0.36
0.45
Drainsource ON-resistance
RDS (ON)
VGS = 10 V, ID = 2 A
0.28
0.35
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2 A
1.5
3.5
S
Input capacitance
Ciss
280
Reverse transfer capacitance
Crss
50
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
105
pF
Rise time
tr
20
Turnon time
ton
50
Fall time
tf
40
Switching time
Turnoff time
toff
170
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
13.5
Gatesource charge
Qgs
8.5
Gatedrain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 3 A
5
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
3
A
Pulse drain reverse current
(Note 1)
IDRP
12
A
Forward voltage (diode)
VDSF
IDR = 3 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
100
ns
Reverse recovered charge
Qrr
IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / μs
0.2
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K2200
Lot No.
Note 4
Part No. (or abbreviation code)
相关PDF资料
PDF描述
2SK2201(2-7B1B) 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2217 RF POWER, FET
2SK2234 8 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2294 3 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2315TYTR-E 2 A, 60 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK2200(TP,Q) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 3A 3-Pin TPS T/R
2SK2200_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NCHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
2SK2200_09 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive
2SK2200TP 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 100V 3A 3PIN TPS - Tape and Reel
2SK2201 制造商:Toshiba America Electronic Components 功能描述:MOSFET N LOGIC I-PAK