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参数资料
| 型号： | 2SK2586 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N沟道MOSFET) |
| 中文描述： | 硅N沟道场效应晶体管（不适用沟道MOSFET的） |
| 文件页数： | 3/5页 |
| 文件大小： | 40K |
| 代理商： | 2SK2586 |
2SK2586
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
100
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 30 A
V
GS
= 10 V*
I
D
= 30 A
V
GS
= 4 V*
I
D
= 30 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
1.0
—
2.0
Static drain to source on state
resistance
—
7
10
m
1
—
10
16
m
1
Forward transfer admittance
|y
fs
|
35
60
—
S
1
Input capacitance
Ciss
—
3550
—
pF
Output capacitance
Coss
—
1760
—
pF
Reverse transfer capacitance
Crss
—
500
—
pF
Turn-on delay time
t
d(on)
—
35
—
ns
I
D
= 30 A
V
GS
= 10 V
R
L
= 1.0
Rise time
t
r
t
d(off)
t
f
V
DF
—
260
—
ns
Turn-off delay time
—
480
—
ns
Fall time
—
370
—
ns
Body to drain diode forward
voltage
—
0.94
—
V
I
F
= 60 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
140
—
ns
I
= 60 A, V
= 0
diF / dt = 50 A /
μ
s
See characteristic curves of 2SK2529.
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2586(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine |
| 2SK2586-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,60A,7ohm,TO-3P |
| 2SK2588 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK258H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-3 |
| 2SK2590 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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