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参数资料
| 型号： | 2SK2839 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-7H1B, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 133K |
| 代理商： | 2SK2839 |
2SK2839
2002-06-05
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2839
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4 V gatedrive
Low drainsource ON resistance
: RDS (ON) = 30 m (typ.)
High forward transfer admittance
: |Yfs| = 11 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 30 V)
Enhancementmode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
30
V
Draingate voltage (RGS = 20 k)
VDGR
30
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
10
A
Drain current
Pulse (Note 1)
IDP
40
A
Drain power dissipation
(Note 2)
PD
2.5
W
Single pulse avalanche energy
(Note 3)
EAS
282
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 4)
EAR
0.25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 2 mH, RG = 25 , IAR = 10 A
Note 4: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-7H1B
Weight: 0.12 g (typ.)
Marking
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2841 | 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2841(F) | 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2842 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220NIS |
| 2SK2842(Q,T) | 功能描述:MOSFET MOSFET N-Ch 500V 12A Rdson 0.52 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2843 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:600V 10A 45W Gds Toshiba Fet Sc-67 |
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