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参数资料
| 型号： | 5962R9679801VXA |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 比较器 |
| 英文描述： | DUAL COMPARATOR, 6800 uV OFFSET-MAX, 80 ns RESPONSE TIME, CDSO10 |
| 封装： | CERAMIC, SOIC-10 |
| 文件页数： | 18/18页 |
| 文件大小： | 722K |
| 代理商： | 5962R9679801VXA |
DC DELTA Parameters
SMD 5962-9679801
The following conditions apply, unless otherwise specified.
V
CM = 0V, Delta calculations performed on QMLV devices at group B, subgroup 5 only.
Symbol
Parameter
Conditions
Notes
Min
Max
Units
Sub-
groups
+I
CC
Positive Supply Current
±V
CC = ±15V, VO = Low
V+ = 5.6V thru 1.4K
-1.0
1.0
mA
1
-I
CC
Negative Supply Current
±V
CC = ±15V, VO = Low
V+ = 5.6V thru 1.4K
-0.5
0.5
mA
1
V
IO
Input Offset Voltage
+
V
CC = 5V, VCM = 1V, RS ≤ 5K
-0.4
0.4
mV
1
Post Radiation Parameters
SMD 5962-9679801
(Note 12)
The following conditions apply, unless otherwise specified.
V
CM = 0V
Symbol
Parameter
Conditions
Notes
Min
Max
Units
Sub-
groups
I
IB
input Bias Current
±V
CC = ±15V
1.0
A
1
V
CC = 5V
1.0
A
1
V
IO
Input Offset Voltage
+
V
CC = 5V, VCM = 1V, RS ≤ 5K
-4.0
4.0
mV
1
+
V
CC = 5V, VCM = 3V, RS ≤ 5K
-4.0
4.0
mV
1
±V
CC = ±15V, VCM = 12V, RS ≤
5K
-4.0
4.0
mV
1
±V
CC = ±15V, VCM = 12V, RS ≤
5K
-4.0
4.0
mV
1
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
Jmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and T
A (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3:
For supply voltages less than ±15V the absolute maximum input voltage is equal to the supply voltage.
Note 4:
Human Body model, 1.5K
in series with 100pF.
Note 5:
V
I ≥ 8mV at extremes for ILeak and VI ≤ 8mV at extremes for VSat (VI to exceed VOS.
Note 6:
5V differential across +V
CC and VCC.
Note 7:
Parameter guaranteed by V
IO and IIO tests.
Note 8:
K = V/mV.
Note 9:
Gain is computed with an output swing from +13.5V to +1.5V.
Note 10:
Gain is computed with an output swing from +5.0V to +0.5V.
Note 11:
Output is monitored by measuring V
I with limits from 0 to 6mV at all temperatures
Note 12:
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table.
These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters
are guaranteed only for the conditions as specified in Mil-Std-883, Method 1019, Condition A.
9
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LM119QML
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