参数资料
型号: 933910440112
厂商: NXP SEMICONDUCTORS
元件分类: 整流器
英文描述: 1.9 A, 200 V, SILICON, RECTIFIER DIODE
文件页数: 18/19页
文件大小: 137K
代理商: 933910440112
1997 Nov 24
8
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYV28 series
BYV28-50 to 400
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MGA871
4.8
0
3.2
2.4
1.6
0.8
4.0
P
(W)
I
(A)
F(AV)
24
a = 3
2.5
2
1.57
1.42
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
BYV28-500 and 600
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
handbook, halfpage
0
MGK644
5
0
3
2
1
4
P
(W)
IF(AV)(A)
23
14
a = 3
2.5 2
1.57
1.42
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
handbook, halfpage
0
100
200
0
100
50
VR (%VRmax)
Tj
(
°C)
MGK645
BYV28-50 to 200
Dotted line: Tj = 175 °C.
Solid line: Tj =25 °C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02
10
0
4
2
8
6
MGA865
1
I F
(A)
V
(V)
F
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