参数资料
型号: IDT70V657S12BF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 15/24页
文件大小: 0K
描述: IC SRAM 1.125MBIT 12NS 208FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1.125M(32K x 36)
速度: 12ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 208-LFBGA
供应商设备封装: 208-CABGA(15x15)
包装: 带卷 (TR)
其它名称: 70V657S12BF8
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Symbol
Parameter
Unit
Min.
Max.
Min.
Max.
Min.
Max.
BUSY TIMING (M/ S =V IH )
BUSY Disable to Valid Data
t BAA
t BDA
t BAC
t BDC
t APS
t BDD
BUSY Access Time from Address Match
BUSY Disable Time from Address Not Matched
BUSY Access Time from Chip Enable Low
BUSY Disable Time from Chip Enable High
Arbitration Priority Set-up Time (2)
(3)
____
____
____
____
5
____
10
10
10
10
____
10
____
____
____
____
5
____
12
12
12
12
____
12
____
____
____
____
5
____
15
15
15
15
____
15
ns
ns
ns
ns
ns
ns
t WH
Write Hold After BUSY
(5)
8
____
10
____
12
____
ns
BUSY TIMING (M/ S =V IL )
t WB
t WH
BUSY Input to Write (4)
Write Hold After BUSY (5)
0
8
____
____
0
10
____
____
0
12
____
____
ns
ns
PORT-TO-PORT DELAY TIMING
t WDD
t DDD
Write Pulse to Data Delay (1)
Write Data Valid to Read Data Delay (1)
____
____
22
20
____
____
25
22
____
____
30
25
ns
ns
NOTES:
4869 tbl 14
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and BUSY (M/ S = V IH )".
2. To ensure that the earlier of the two ports wins.
3. t BDD is a calculated parameter and is the greater of the Max. spec, t WDD – t WP (actual), or t DDD – t DW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
15
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