参数资料
型号: IDT70V657S12BF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/24页
文件大小: 0K
描述: IC SRAM 1.125MBIT 12NS 208FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1.125M(32K x 36)
速度: 12ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 208-LFBGA
供应商设备封装: 208-CABGA(15x15)
包装: 带卷 (TR)
其它名称: 70V657S12BF8
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control (1,2)
Byte 3
Byte 2
Byte 1
Byte 0
OE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
H
SEM
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
CE 0
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
CE 1
X
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
BE 3
X
X
H
H
H
H
L
H
L
L
H
H
H
L
H
L
L
L
BE 2
X
X
H
H
H
L
H
H
L
L
H
H
L
H
H
L
L
L
BE 1
X
X
H
H
L
H
H
L
H
L
H
L
H
H
L
H
L
L
BE 0
X
X
H
L
H
H
H
L
H
L
L
H
H
H
L
H
L
L
R/ W
X
X
X
L
L
L
L
L
L
L
H
H
H
H
H
H
H
X
I/O 27-35
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D IN
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
D OUT
High-Z
I/O 18-26
High-Z
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
D IN
High-Z
High-Z
D OUT
High-Z
High-Z
D OUT
D OUT
High-Z
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
D IN
High-Z
D IN
High-Z
D OUT
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
High-Z
High-Z
D OUT
High-Z
D OUT
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Byte 0 Only
Write to Byte 1 Only
Write to Byte 2 Only
Write to Byte 3 Only
Write to Lower 2 Bytes Only
Write to Upper 2 bytes Only
Write to All Bytes
Read Byte 0 Only
Read Byte 1 Only
Read Byte 2 Only
Read Byte 3 Only
Read Lower 2 Bytes Only
Read Upper 2 Bytes Only
Read All Bytes
Outputs Disabled
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table II – Semaphore Read/Write Control (1)
4869 tbl 02
Inputs (1)
Outputs
CE (2)
H
H
L
R/ W
H
X
OE
L
X
X
BE 3
L
X
X
BE 2
L
X
X
BE 1
L
X
X
BE 0
L
L
X
SEM
L
L
L
I/O 1-35
DATA OUT
X
______
I/O 0
DATA OUT
DATA IN
______
Mode
Read Data in Semaphore Flag (3)
Write I/O 0 into Semaphore Flag
Not Allowed
NOTES:
1. There are eight semaphore flags written to I/O 0 and read from all the I/Os (I/O 0 -I/O 35 ). These eight semaphore flags are addressed by A 0 -A 2 .
2. CE = L occurs when CE 0 = V IL and CE 1 = V IH .
3. Each byte is controlled by the respective BE n. To read data BE n = V IL .
7
4869 tbl 03
相关PDF资料
PDF描述
KMPC8560PX833LC IC MPU POWERQUICC III 783-FCPBGA
KMPC8560PX833LB IC MPU POWERQUICC III 783-FCPBGA
IDT70V657S12BC8 IC SRAM 1.125MBIT 12NS 256BGA
KMPC8560PX667LB IC MPU POWERQUICC III 783-FCPBGA
IDT70V3389S6PRF8 IC SRAM 1.125MBIT 6NS 128TQFP
相关代理商/技术参数
参数描述
AD622ARZ-RL7 制造商:AD 制造商全称:Analog Devices 功能描述:Low Cost Instrumentation Amplifier
AD623 制造商:AD 制造商全称:Analog Devices 功能描述:Single Supply, Rail-to-Rail, Low Cost Instrumentation Amplifier
AD623-00E 功能描述:SENSOR MAG SW 80G CROS AX 8-MSOP 制造商:nve corp/sensor products 系列:AD 包装:管件 零件状态:有效 功能:全极开关 技术:霍尔效应 极化:任意一种 感应范围:±10mT 跳闸,±6.5mT 释放 测试条件:-40°C ~ 125°C 电压 - 电源:4.5 V ~ 30 V 电流 - 电源(最大值):4.5mA 电流 - 输出(最大值):20mA 输出类型:开路集电极 特性:- 工作温度:-40°C ~ 125°C(TA) 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商器件封装:8-MSOP 标准包装:1,000
AD623-02E 功能描述:SENSOR MAG SW 80G CROS AXS 8SOIC 制造商:nve corp/sensor products 系列:AD 包装:管件 零件状态:有效 功能:全极开关 技术:霍尔效应 极化:任意一种 感应范围:±10mT 跳闸,±6.5mT 释放 测试条件:-40°C ~ 125°C 电压 - 电源:4.5 V ~ 30 V 电流 - 电源(最大值):4.5mA 电流 - 输出(最大值):20mA 输出类型:开路集电极 特性:- 工作温度:-40°C ~ 125°C(TA) 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商器件封装:8-SOIC 标准包装:1,000
AD6231 制造商:AD 制造商全称:Analog Devices 功能描述:10 MHz, 20 V/レs, G = 1, 10, 100, 1000 i CMOS㈢ Programmable Gain Instrumentation Amplifier