参数资料
| 型号： | MC78L12ABDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 12V .1A 8SOIC |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 12V |
| 输入电压： | 最高 35V |
| 电压 - 压降（标准）： | 1.7V @ 40mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 100mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1116 (CN2011-ZH PDF) |
| 其它名称： | MC78L12ABDR2GOSDKR |
MC78L00A Series, NCV78L00A
Input
C in *
0.33 m F
MC78LXXA
Output
C O **
0.1 m F
Figure 2. Standard Application
A common ground is required between the input and the output voltages. The input voltage must remain typically 2.0 V above the output
voltage even during the low point on the input ripple voltage.
* C in is required if regulator is located an appreciable distance from power supply filter.
** C O is not needed for stability; however, it does improve transient response.
ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (5.0 V ? 9.0 V)
Input Voltage (12 V ? 18 V)
Input Voltage (24 V)
Storage Temperature Range
Maximum Junction Temperature
Moisture Sensitivity Level
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Model (Note 1)
ESD Capability, Charged Device Model (Note 1)
Symbol
V I
T stg
T J
MSL
ESD HBM
ESD MM
ESD CDM
Value
30
35
40
? 65 to +150
150
1
2000
200
2000
Unit
Vdc
? C
? C
?
V
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A114)
ESD Machine Model tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A115)
ESD Charged Device Model tested per EIA/JES D22/C101, Field Induced Charge Model.
THERMAL CHARACTERISTICS
Rating
Package Dissipation
Thermal Characteristics, TO ? 92
Thermal Resistance, Junction ? to ? Ambient
Thermal Characteristics, SOIC8
Thermal Resistance, Junction ? to ? Ambient
Symbol
PD
R q JA
R q JA
Value
Internally Limited
200
Refer to Figure 8
Unit
W
? C/W
? C/W
2. Thermal Resistance, Junction ? to ? Ambient depends on P.C.B. Copper area. See details in Figure 8.
Thermal Resistance, Junction ? to ? Case is not defined. SOIC 8 lead and TO-92 packages that do not have a heat sink like other packages
may have. This is the reason that a Theta JC is never specified. A little heat transfer will occur through the package but since it is plastic, it is
minimal. The majority of the heat that is transferred is through the leads where they connect to the circuit board.
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| AD8609ARZ-REEL7 | 功能描述:IC OPAMP GP R-R CMOS QUAD 14SOIC RoHS:是 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:LinCMOS™ 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.05 V/µs 增益带宽积:110kHz -3db带宽:- 电流 - 输入偏压:0.7pA 电压 - 输入偏移:210µV 电流 - 电源:57µA 电流 - 输出 / 通道:30mA 电压 - 电源，单路/双路(±):3 V ~ 16 V，±1.5 V ~ 8 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOIC 包装:管件 产品目录页面:865 (CN2011-ZH PDF) 其它名称:296-1834296-1834-5 |
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