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参数资料
| 型号： | ISL6613IRZ-T |
| 厂商： | Intersil |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 10-DFN |
| 标准包装： | 6,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 1.25A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 带卷 (TR) |
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ISL6612, ISL6613
Data Sheet
June 15, 2010
FN9153.9
Advanced Synchronous Rectified Buck
MOSFET Drivers with Protection Features
The ISL6612 and ISL6613 are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612 drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6613 drives both upper and lower gates over a
range of 5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize the dead time.
These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at which
the PHASE node is connected to the gate of the low side
MOSFET (LGATE). The output voltage of the converter is then
limited by the threshold of the low side MOSFET, which
provides some protection to the microprocessor if the upper
MOSFET(s) is shorted during startup. The over-temperature
protection feature prevents failures resulting from excessive
power dissipation by shutting off the outputs when its junction
temperature exceeds +150°C (typically). The driver resets once
its junction temperature returns to +108°C (typically).
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
? Pin-to-pin Compatible with HIP6601 SOIC family for Better
Performance and Extra Protection Features
? Dual MOSFET Drives for Synchronous Rectified Bridge
? Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r DS(ON) Conduction Offset Effect
? Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
? 36V Internal Bootstrap Schottky Diode
? Bootstrap Capacitor Overcharging Prevention
? Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
? Three-State PWM Input for Output Stage Shutdown
? Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
? Pre-POR Overvoltage Protection
? VCC Undervoltage Protection
? Over Temperature Protection (OTP) with +42°C
Hysteresis
? Expandable Bottom Copper Pad for Enhanced Heat
Sinking
? Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
? Pb-Free Available (RoHS Compliant)
Applications
? Core Regulators for Intel? and AMD? Microprocessors
? High Current DC/DC Converters
? High Frequency and High Efficiency VRM and VRD
Related Literature
? Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
? Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005, 2006, 2007, 2010. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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