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参数资料
| 型号： | AGR19045EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 9/11页 |
| 文件大小： | 225K |
| 代理商： | AGR19045EF |
Agere Systems Inc.
7
Preliminary Data Sheet
AGR19045EF
June 2004
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Test Conditions:
VDD = 28 V, IDQ = 550 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz. 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz bandwidth. Peak/average = 9.72 dB @
0.01% probability (CCDF). Channel spacing (bandwidth); ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. Power
Test Conditions:
VDD = 28 VDC, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2-carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA, GPS vs. POUT
0
5
10
15
20
25
30
35
40
45
50
55
60
30
35
40
45
POUT(dBm)Z
G
PS
(
d
B
),
η
(%
)Z
-70
-60
-50
-40
-30
-20
-10
IM
3
(d
B
c
),
A
C
P
R
(d
B
c
)Z
ACP
GPS
η
IM3
13.25
14.25
15.25
30
35
40
45
POUT(dBm)Z
G
PS
(d
B
)Z
IDQ= 300 mA
IDQ= 600 mA
IDQ= 550 mA
IDQ= 500 mA
IDQ= 400 mA
IDQ= 700 mA
相关PDF资料 |
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| AGR19045EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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