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参数资料
| 型号： | AM28F010-70JEB |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 15/35页 |
| 文件大小： | 492K |
| 代理商： | AM28F010-70JEB |
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Am28F010
15
the Erase-verify command (section D). Addresses are
latched on the falling edge of the WE# pulse.
Another software timing routine (6 μs duration) must be
executed to allow for generation of internal voltages for
margin checking and read operation (section E).
During Erase-verification (section F) each address that
returns FFh data is successfully erased. Each address
of the array is sequentially verified in this manner by re-
peating sections D thru F until the entire array is veri-
fied or an address fails to verify. Should an address
location fail to verify to FFh data, erase the device
again. Repeat sections A thru F. Resume verification
(section D) with the failed address.
Each data change sequence allows the device to use
up to 1,000 erase pulses to completely erase. Typically
100 erase pulses are required.
Note:
All address locations must be programmed to
00h prior to erase. This equalizes the charge on all
memory cells and ensures reliable erasure.
FLASHRITE PROGRAMMING SEQUENCE
Program Setup
The device is programmed byte by byte. Bytes may be
programmed sequentially or at random. Program Setup
is the first of a two-cycle program command. It stages
the device for byte programming. The Program Setup
operation is performed by writing 40h to the command
register.
Program
Only after the program Setup operation is completed
will the next WE# pulse initiate the active programming
operation. The appropriate address and data for pro-
gramming must be available on the second WE# pulse.
Addresses and data are internally latched on the falling
and rising edge of the WE# pulse respectively. The ris-
ing edge of WE# also begins the programming opera-
tion. You must write the Program-verify command to
terminate the programming operation. This two step
sequence of the Setup and Program commands helps
to ensure that memory contents are not accidentally
written. Also, programming can only occur when high
voltage is applied to the V
PP
pin and all control pins are
in their proper state. In absence of this high voltage,
memory contents cannot be programmed.
Refer to AC Characteristics and Waveforms for specific
timing parameters.
Program Verify Command
Following each programming operation, the byte just
programmed must be verified.
Write C0h into the command register in order to initiate
the Program-verify operation. The rising edge of this
WE pulse terminates the programming operation. The
Program-verify operation stages the device for verifica-
tion of the last byte programmed. Addresses were pre-
viously latched. No new information is required.
Margin Verify
During the Program-verify operation, the device applies
an internally generated margin voltage to the ad-
dressed byte. A normal microprocessor read cycle out-
puts the data. A successful comparison between the
programmed byte and the true data indicates that the
byte was successfully programmed. The original pro-
grammed data should be stored for comparison. Pro-
gramming then proceeds to the next desired byte
location. Should the byte fail to verify, reprogram (refer
to Program Setup/Program). Figure 3 and Table 5 indi-
cate how instructions are combined with the bus oper-
ations to perform byte programming. Refer to AC
Programming Characteristics and Waveforms for spe-
cific timing parameters.
Flashrite
Programming Algorithm
The device Flashrite
Programming algorithm employs
an interactive closed loop flow to program data byte by
byte. Bytes may be programmed sequentially or at ran-
dom. The Flashrite
Programming algorithm uses 10 μs
programming pulses. Each operation is followed by a
byte verification to determine when the addressed byte
has been successfully programmed. The program al-
gorithm allows for up to 25 programming operations per
byte per reprogramming cycle. Most bytes verify after
the first or second pulse. The entire sequence of pro-
gramming and byte verification is performed with high
voltage applied to the V
PP
pin. Figure 3 and Table 5 il-
lustrate the programming algorithm.
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010-70JI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70JIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010-70JI | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70JIB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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