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参数资料
| 型号： | AM28F010-70JEB |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| 中文描述： | 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 |
| 封装： | PLASTIC, LCC-32 |
| 文件页数： | 35/35页 |
| 文件大小： | 492K |
| 代理商： | AM28F010-70JEB |
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Am28F010
35
REVISION SUMMARY FOR AM28F010
Revision G+1
Distinctive Characteristics:
High Performance: The fastest speed option available
is now 70 ns.
General Description:
Paragraph 2: Changed fastest speed option to 70 ns.
Product Selector Guide:
Added -70, deleted -95 and -250 speed options.
Ordering Information, Standard Products:
The -70 speed option is now listed in the example.
Valid Combinations: Added -70, deleted -95 and -250
combinations.
Operating Ranges:
V
CC
Supply Voltages:Added -70, deleted -95 and -250
speed options.
AC Characteristics:
Read Only Operations Characteristics: Added the -70
column and test conditions.
Deleted -95 and -250 speed options.
AC Characteristics:
Write/Erase/Program Operations: Added the -70 col-
umn. Deleted -95 and -250 speed options. Changed
speed option in Note 2 to -70.
Switching Test Waveforms:
In the 3.0 V waveform caption, changed -95 to -70.
Revision H
Matched formatting to other current data sheets.
Revision H+1
Figure 3, Flashrite Programming Algorithm: Moved end
of arrow originating from Increment Address box so
that it points to the PLSCNT = 0 box, not the Write Pro-
gram Verify Command box. This is a correction to the
diagram on page 6-189 of the 1998 Flash Memory
Data Book.
Revision H+2
Programming In A PROM Programmer:
Deleted the paragraph “(Refer to the AUTO SELECT
paragraph in the ERASE, PROGRAM, and READ
MODE section for programming the Flash memory de-
vice in-system).”
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010-70JI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70JIB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010-70JI | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70JIB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
| AM28F010-70PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory |
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