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参数资料
| 型号： | AM28F010A-90JIB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128亩× 8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法 |
| 文件页数： | 12/35页 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-90JIB |
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12
Am28F010A
FLASH MEMORY PROGRAM/ERASE
OPERATIONS
Embedded Erase Algorithm
The automatic chip erase does not require the device
to be entirely pre-programmed prior to executing the
Embedded set-up erase command and Embedded
erase command. Upon executing the Embedded erase
command the device automatically will program and
verify the entire memory for an all zero data pattern.
The system is not required to provide any controls or
timing during these operations.
When the device is automatically verified to contain an
all zero pattern, a self-timed chip erase and verify be-
gin. The erase and verify operation are complete when
the data on DQ7 is “1" (see Write Operation Status sec-
tion) atwhich time the device returns to Read mode.
The system is not required to provide any control or
timing during these operations.
When using the Embedded Erase algorithm, the erase
automatically terminates when adequate erase margin
has been achieved for the memory array (no erase ver-
ify command is required). The margin voltages are in-
ternally generated in the same manner as when the
standard erase verify command is used.
The Embedded Erase Set-Up command is a command
only operation that stages the device for automatic
electrical erasure of all bytes in the array. Embedded
Erase Setup is performed by writing 30h to the com-
mand register.
To commence automatic chip erase, the command 30h
must be written again to the command register. The au-
tomatic erase begins on the rising edge of the WE and
terminates when the data on DQ7 is “1" (see Write Op-
eration Status section) at which time the device returns
to Read mode.
Figure 1 and Table 4 illustrate the Embedded Erase al-
gorithm, a typical command string and bus operation.
Table 4.
Embedded Erase Algorithm
Note:
See AC and DC Characteristics for values of V
PP
parameters. The V
PP
power supply can be hard-wired to the device or
switchable. When V
PP
is switched, V
PPL
may be ground, no connect with a resistor tied to ground, or less than V
CC
+ 2.0 V Refer
to Functional Description.
Bus Operations
Command
Comments
Standby
Wait for V
PP
Ramp to V
PPH
(see Note)
Write
Embedded Erase Setup Command
Data = 30h
Embedded Erase Command
Data = 30h
Read
Data
#
Polling to Verify Erasure
Standby
Compare Output to FFh
Read
Available for Read Operations
START
Apply V
PPH
Erasure Completed
Data# Poll from Device
Write Embedded Erase Command
Write Embedded Erase Setup Command
16778D-6
Figure 1.
Embedded Erase Algorithm
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010A-90PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010A-90LC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AM28F010A-90PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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