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参数资料
| 型号： | AM28F010A-90JIB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128亩× 8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法 |
| 文件页数： | 18/35页 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-90JIB |
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Am28F010A
This detailed information is for your reference. It may
prove easier to always issue the Reset command two
consecutive times. This eliminates the need to deter-
mine if you are in the Setup Program state or not.
In-System Programming Considerations
Flash memories can be programmed in-system or in a
standard PROM programmer. The device may be sol-
dered to the circuit board upon receipt of shipment and
programmed in-system. Alternatively, the device may
initially be programmed in a PROM programmer prior
to soldering the device to the circuit board.
Auto Select Command
AMD’s Flash memories are designed for use in appli-
cations where the local CPU alters memory contents.
In order to correctly program any Flash memories
in-system, manufacturer and device codes must be
accessible while the device resides in the target
system. PROM programmers typically access the sig-
nature codes by raising A9 to a high voltage. However,
multiplexing high voltage onto address lines is not a
generally desired system design practice.
The device contains an Auto Select operation to supple-
ment traditional PROM programming methodologies.
The operation is initiated by writing 80h or 90h into the
command register. Following this command, a read
cycle address 0000h retrieves the manufacturer code of
01h (AMD). A read cycle from address 0001h returns
the device code (see the Auto Select Code table of the
corresponding device data sheet). To terminate the op-
eration, it is necessary to write another valid command,
such as Reset (00h or FFh), into the register.
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010A-90PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010A-90LC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AM28F010A-90PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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