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参数资料
| 型号： | AM28F010A-90JIB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128亩× 8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法 |
| 文件页数： | 19/35页 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-90JIB |
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Am28F010A
19
ABSOLUTE MAXIMUM RATINGS
Storage Temperature . . . . . . . . . . . .
–65
°
C to +125
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55
°
C to +125
°
C
Voltage with Respect to Ground
All pins except A9 and V
PP
(Note 1) .–2.0 V to +7.0 V
V
CC
(Note 1). . . . . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
A9, V
PP
(Note 2) . . . . . . . . . . . . . . .–2.0 V to +14.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1.
Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot V
SS
to
–2.0 V for periods of up to 20 ns. Maximum DC voltage on
input or I/O pins is V
CC
+0.5 V During voltage transitions,
input or I/O pins may overshoot to V
CC
+2.0 V for periods
up to 20 ns.
2. Minimum DC input voltage on pins A9 and V
PP
is –0.5 V
During voltage transitions, A9 and V
PP
may overshoot
V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC
input voltage on pin A9 and V
PP
is +13.0 V, which may
overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those
indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum
rating conditions for extended periods may affect device
reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . .
0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . .–40°C to +85°C
Extended (E) Devices
Ambient Temperature (T
A
) . . . . . . . .–55°C to +125°C
V
CC
Supply Voltages
V
CC
. . . . . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
V
PP
Voltages
Read . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.6 V
Program, Erase, and Verify. . . . . . +11.4 V to +12.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
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| AM28F010A-90PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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| AM28F010A-90PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010A-90LC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AM28F010A-90PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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