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参数资料
| 型号： | AM28F010A-90JIB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128亩× 8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法 |
| 文件页数： | 2/35页 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-90JIB |
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Am28F010A
Embedded Program
The Am28F010A is byte programmable using the
Embedded Program algorithm, which does not require
the system to time-out or verify the data programmed.
The typical room temperature programming time of this
device is two seconds.
Embedded Erase
The entire device is bulk erased using the Embedded
Erase algorithm, which automatically programs the
entire array prior to electrical erase. The timing and ver-
ification of electrical erase are controlled internal to the
device. Typical erasure time at room temperature is five
seconds, including preprogramming.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine,
which controls the erase and programming circuitry.
During write cycles, the command register internally
latches addresses and data needed for the program-
ming and erase operations. For system design simpli-
fication, the Am28F010A is designed to support either
WE# or CE# controlled writes. During a system write
cycle, addresses are latched on the falling edge of
WE# or CE#, whichever occurs last. Data is latched
on the rising edge of WE# or CE#, whichever occurs
first. To simplify the following discussion, the WE# pin
is used as the write cycle control pin throughout the
rest of this text. All setup and hold times are with
respect to the WE# signal.
Comparing Embedded Algorithms with Flasherase and Flashrite Algorithms
Am28F010A with
Embedded Algorithms
Am28F010 using AMD Flashrite
and Flasherase Algorithms
Embedded
Programming
Algorithm vs.
Flashrite
Programming
Algorithm
AMD’s Embedded Programming algorithm
requires the user to only write a program
set-up command and a program command
(program data and address). The device
automatically times the programming
pulse width, verifies the programming, and
counts the number of sequences. A status
bit, Data
#
Polling, provides the user with
the programming operation status.
The Flashrite Programming algorithm requires the
user to write a program set-up command, a program
command, (program data and address), and a
program verify command, followed by a read and
compare operation. The user is required to time the
programming pulse width in order to issue the
program verify command. An integrated stop timer
prevents any possibility of overprogramming.
Upon completion of this sequence, the data is read
back from the device and compared by the user with
the data intended to be written; if there is not a
match, the sequence is repeated until there is a
match or the sequence has been repeated 25 times.
Embedded Erase
Algorithm vs.
Flasherase Erase
Algorithm
AMD’s Embedded Erase algorithm
requires the user to only write an erase set-
up command and erase command. The
device automatically pre-programs and
verifies the entire array. The device then
automatically times the erase pulse width,
verifies the erase operation, and counts
the number of sequences. A status bit,
Data
#
Polling, provides the user with the
erase operation status.
The Flasherase Erase algorithm requires the device
to be completely programmed prior to executing an
erase command.
To invoke the erase operation, the user writes an
erase set-up command, an erase command, and an
erase verify command. The user is required to time
the erase pulse width in order to issue the erase
verify command. An integrated stop timer prevents
any possibility of overerasure.
Upon completion of this sequence, the data is read
back from the device and compared by the user with
erased data. If there is not a match, the sequence is
repeated until there is a match or the sequence has
been repeated 1,000 times.
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010A-90PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010A-90LC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AM28F010A-90PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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