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参数资料
| 型号： | AM28F010A-90JIB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128亩× 8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法 |
| 文件页数： | 22/35页 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-90JIB |
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22
Am28F010A
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
Caution:
The Am28F010A must not be removed from (or inserted into) a socket when V
CC
or V
PP
is applied. If V
CC
≤
1.0 volt,
the voltage difference between V
PP
and V
CC
should not exceed 10.0 volts. Also, the Am28F010A has a V
PP
rise time and fall
time specification of 500 ns minimum.
2. I
CC1
is tested with OE
#
= V
IH
to simulate open outputs.
3. Maximum active power usage is the sum of I
CC
and I
PP
.
4. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
CC
= V
CC
Max, V
IN
= V
CC
or V
SS
±
1.0
μA
I
LO
Output Leakage Current
V
CC
= V
CC
Max, V
OUT
= V
CC
or V
SS
±
1.0
μA
I
CCS
V
CC
Standby Current
V
CC
= V
CC
Max, CE
#
=
V
CC
±
0.5 V
15
100
μA
I
CC1
V
CC
Active Read Current
V
CC
= V
CC
Max, CE
#
= V
IL,
OE
#
=
V
IH
I
OUT
= 0 mA, at 6 MHz
20
30
mA
I
CC2
V
CC
Programming Current
CE
#
= V
IL
Programming in Progress
(Note 4)
20
30
mA
I
CC3
V
CC
Erase Current
CE
#
= V
IL
Erasure in Progress
(Note 4)
20
30
mA
I
PPS
V
PP
Standby Current
V
PP
= V
PPL
±
1.0
μA
I
PP1
V
PP
Read Current
V
PP
= V
PPH
70
200
μA
I
PP2
V
PP
Programming Current
V
PP
= V
PPH
Programming in Progress (Note 4)
10
30
mA
I
PP3
V
PP
Erase Current
V
PP
= V
PPH
Erasure in Progress (Note 4)
10
30
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8 mA, V
CC
= V
CC
Min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC
Min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC =
V
CC
Min
V
CC
–0.4
V
ID
A9 Auto Select Voltage
A9 = V
ID
11.5
13.0
V
I
ID
A9 Auto Select Current
A9 = V
ID
Max, V
CC
= V
CC
Max
5
50
μA
V
PPL
V
PPL
during Read-Only
Operations
Note:
Erase/Program are inhibited
when V
PP
= V
PPL
0.0
V
CC
+ 2.0
V
V
PPH
V
PP
during Read/Write
Operations
11.4
12.6
V
V
LKO
Low V
CC
Lock-out Voltage
3.2
3.7
V
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010A-90PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010A-90LC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AM28F010A-90PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
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