参数资料
型号: AM28F010A-90JIB
厂商: Advanced Micro Devices, Inc.
英文描述: 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
中文描述: 1兆位(128亩× 8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
文件页数: 32/35页
文件大小: 464K
代理商: AM28F010A-90JIB
32
Am28F010A
PHYSICAL DIMENSIONS
PD032—32-Pin Plastic DIP (measured in inches)
PL032—32-Pin Plastic Leaded Chip Carrier (measured in inches)
Pin 1 I.D.
1.640
1.670
.530
.580
.005 MIN
.045
.065
.090
.110
.140
.225
.120
.160
.016
.022
SEATING PLANE
.015
.060
16-038-S_AG
PD 032
EC75
5-28-97 lv
32
17
16
.630
.700
0
°
10
°
.600
.625
.009
.015
.050 REF.
.026
.032
TOP VIEW
Pin 1 I.D.
.485
.495
.447
.453
.585
.595
.547
.553
16-038FPO-5
PL 032
DA79
6-28-94 ae
SIDE VIEW
SEATING
PLANE
.125
.140
.009
.015
.080
.095
.042
.056
.013
.021
.400
REF.
.490
.530
相关PDF资料
PDF描述
AM28F010A-90PC 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-90PCB 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-90PE 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-90PEB 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-90PI 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
相关代理商/技术参数
参数描述
AM28F010A-90LC 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM
AM28F010A-90PC 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-90PCB 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-90PE 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
AM28F010A-90PEB 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms