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参数资料
| 型号： | AM29F200BB-75DPC1 |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 128K X 16 FLASH 5V PROM, 70 ns, UUC42 |
| 封装： | DIE-42 |
| 文件页数： | 1/10页 |
| 文件大小： | 174K |
| 代理商： | AM29F200BB-75DPC1 |
SUPPLEMENT
Publication# 21257
Rev: D Amendment/+4
Issue Date: June 27, 2001
Am29F200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
s 5.0 V
± 10% for read and write operations
— Minimizes system level power requirements
s Manufactured on 0.32 m process technology
— Compatible with 0.5 m Am29F200A device
s High performance
— 70, 90, or 120 ns access time
s Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
— 1 A typical standby current
s Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s Top or bottom boot block configurations
available
s Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s Minimum 1,000,000 write/erase cycles
guaranteed
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
s Data# Polling and Toggle Bit
— Detects program or erase cycle completion
s Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
s Erase Suspend/Resume
— Supports reading data from a sector not being
erased
s Hardware RESET# pin
— Resets internal state machine to the reading
array data
s 20-year data retention at 125
°C
s Tested to datasheet specifications at
temperature
— Contact AMD for higher temperature range
devices
s Quality and reliability levels equivalent to
standard packaged components
相关PDF资料 |
PDF描述 |
|---|---|
| AM29F200T-90FD | 256K X 8 FLASH 5V PROM, 90 ns, PDSO48 |
| AM29F200T-150FE | 256K X 8 FLASH 5V PROM, 150 ns, PDSO48 |
| AM29F200B-150FC | 256K X 8 FLASH 5V PROM, 150 ns, PDSO48 |
| AM29F400BB-120ED | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
| AM29F400BB-120EF | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F200BB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90EF | 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90EI | 制造商:Spansion 功能描述:2M CMOS FLASH 5V 制造商:Advanced Micro Devices 功能描述: |
| AM29F200BB-90SE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 90ns 44-Pin SOIC |
| AM29F200BT-120EI | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 120 ns, PDSO48 |
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