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参数资料
| 型号： | AO4622 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 20 V, 0.023 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 1/9页 |
| 文件大小： | 251K |
| 代理商： | AO4622 |
Symbol
Max p-channel
Units
VDS
V
VGS
V
IDM
IAR
A
EAR
mJ
TJ, TSTG
°C
Symbol
Device
Typ
Max
Units
n-ch
48
62.5
°C/W
n-ch
74
110
°C/W
RθJL
n-ch
35
40
°C/W
p-ch
48
62.5
°C/W
p-ch
74
110
°C/W
RθJL
p-ch
35
40
°C/W
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient
A
Steady-State
-25
TA=70°C
Power Dissipation
TA=25°C
PD
Steady-State
Junction and Storage Temperature Range
A
Continuous Drain
Current
AF
TA=25°C
ID
TA=70°C
Pulsed Drain Current
B
W
7.3
6.2
35
2
1.44
-4.2
-5
2
1.44
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max n-channel
20
-20
±12
Drain-Source Voltage
±16
Gate-Source Voltage
Thermal Characteristics: n-channel and p-channel
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient
A
13
25
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
13
25
AO4622
20V Dual P + N-Channel MOSFET
Product Summary
N-Channel
P-Channel
VDS (V) = 20V
-20V
ID = 7.3A (VGS=4.5V)
-5A (VGS=-4.5V)
RDS(ON)
< 23m
(V
GS=10V)
< 53m
(V
GS = -4.5V)
< 30m
(V
GS=4.5V)
< 87m
(V
GS = -2.5V)
< 84m
(V
GS=2.5V)
100% UIS Tested
100% Rg Tested
General Description
The AO4622 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
to form a level shifted high side switch, and for a
host of other applications.
SOIC-8
Top View
Bottom View
Pin1
G2
S2
G1
S1
D2
D1
Top View
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4622_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET |
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| AO4627 | 功能描述:MOSFET N/P-CH 30V 4.5/3.5A 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
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