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参数资料
| 型号： | AO4800B |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 278K |
| 代理商： | AO4800B |
AO4800B
30V
Dual N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
6.9A
RDS(ON) (at VGS=10V)
< 27m
RDS(ON) (at VGS = 4.5V)
< 32m
RDS(ON) (at VGS = 2.5V)
< 50m
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJL
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
°C/W
Maximum Junction-to-Ambient
A D
32
90
40
Power Dissipation
B
PD
Pulsed Drain Current
C
Continuous Drain
Current
TA=25°C
Avalanche Current
C
Avalanche energy L=0.1mH
C
A
14
TA=25°C
TA=70°C
A
ID
6.9
5.8
30
The AO4800B uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
°C/W
RθJA
48
74
62.5
V
±12
Gate-Source Voltage
Drain-Source Voltage
30
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Units
Parameter
Typ
Max
10
mJ
1.3
TA=70°C
W
2
G2
D
2
S2
G1
D
1
S1
G1
S1
G2
S2
D1
D2
2
4
5
1
3
8
6
7
Top View
SOIC-8
Top View
Bottom View
Pin1
Rev 3: Oct 2010
www.aosmd.com
Page 1 of 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4800B_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET |
| AO4800BL | 制造商:AOS 功能描述:MOSFET |
| AO4800C | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET |
| AO4800L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
| AO4801 | 制造商:AOS 功能描述:MOSFET |
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