参数资料
型号: AP62T02GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: LEAD FREE PACKAGE-3
文件页数: 1/4页
文件大小: 69K
代理商: AP62T02GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low On-resistance
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
48A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
Single Pulse Avalanche Energy
3
mJ
IAR
Avalanche Current
A
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
36.8
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.3
29
24
Continuous Drain Current, VGS @ 10V
30
Pulsed Drain Current
1
120
Gate-Source Voltage
± 20
Continuous Drain Current, VGS @ 10V
48
Parameter
Rating
Drain-Source Voltage
30
200504062-1/4
AP62T02GH/J
Pb Free Plating Product
G D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP62T02GJ) are available for low-profile applications.
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