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参数资料
| 型号： | AS7C1024B-12TCN |
| 厂商： | ALLIANCE MEMORY INC |
| 元件分类： | SRAM |
| 英文描述： | IC,AS7C1024B-12TCN,SOJ-32, SRAM,12NS,128K X 8,5V |
| 中文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封装： | 8 X 20 MM, LEAD FREE, TSOP1-32 |
| 文件页数： | 1/9页 |
| 文件大小： | 260K |
| 代理商： | AS7C1024B-12TCN |
March 2004
Copyright Alliance Memory Inc. All rights reserved.
AS7C1024B
5V 128K X 8 CMOS SRAM
3/26/04, v 1.2
Alliance Memory Inc
P. 1 of 9
Features
Industrial and commercial temperatures
Organization: 131,072 words x 8 bits
High speed
- 10/12/15/20 ns address access time
- 5/6/7/8 ns output enable access time
Low power consumption: ACTIVE
- 605 mW / max @ 10 ns
Low power consumption: STANDBY
- 55 mW / max CMOS
6T 0.18u CMOS technology
Easy memory expansion with CE1, CE2, OE inputs
TTL/LVTTL-compatible, three-state I/O
32-pin JEDEC standard packages
- 300 mil SOJ
- 400 mil SOJ
- 8 × 20mm TSOP 1
- 8 x 13.4mm sTSOP 1
ESD protection ≥ 2000 volts
Latch-up current ≥ 200 mA
Logic block diagram
512 x 256 x 8
Array
(1,048,576)
Sense
a
m
p
Input buffer
A10 A1
1
A12 A13 A14 A15 A16
I/O0
I/O7
OE
CE1
WE
Column decoder
Row
decod
er
Control
circuit
A9
A0
A1
A2
A3
A4
A5
A6
A7
VCC
GND
A8
CE2
Pin arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
A
S
7C102
4B
32-pin SOJ (300 mil)
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O4
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
I/O5
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
32
31
30
29
28
27
26
25
24
23
22
21
AS7C1024B
20
19
15
16
18
17
32-pin (8 x 20mm) TSOP I
32-pin SOJ (400 mil)
32-pin (8 x 13.4mm) sTSOP1
Selection guide
-10
-12
-15
-20
Unit
Maximum address access time
10
12
15
20
ns
Maximum output enable access
time
56
7
8
ns
Maximum Operating Current
110
100
90
80
mA
Maximum CMOS standby Current
10
mA
相关PDF资料 |
PDF描述 |
|---|---|
| AS7C1024B-10JCN | 128K X 8 STANDARD SRAM, 10 ns, PDSO32 |
| AS7C1024LL-70TC | 128K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| AS7C1025B-15JCN | IC,AS7C1025B-15JCN,SOJ-32, SRAM,15NS,128K X 8,5V |
| AS7C1026B-12TCN | IC,AS7C1026B-12TCN,TSOP-32 I, SRAM,12NS,64K X 16,5V |
| AS7C164-15JCN | IC,AS7C164-15JCN,SOJ-28 ASY SRAM,15NS,8K X 8,5V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS7C1024B-12TCNTR | 功能描述:静态随机存取存储器 1M, 5V, 12ns FAST 128K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| AS7C1024B-12TI | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM |
| AS7C1024B-12TIN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM |
| AS7C1024B-12TJC | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:5V 128K X 8 CMOS SRAM |
| AS7C1024B-12TJCN | 功能描述:静态随机存取存储器 1M, 5V, 12ns FAST 128K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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