参数资料
型号: AS7C3364FT32B-80TQCN
厂商: ALLIANCE SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 3.3V 64K x 32/36 Flow Through Synchronous SRAM
中文描述: 64K X 32 STANDARD SRAM, 8 ns, PQFP100
封装: 14 X 20 MM, LEAD FREE, TQFP-100
文件页数: 9/19页
文件大小: 417K
代理商: AS7C3364FT32B-80TQCN
AS7C3364FT32B
AS7C3364FT36B
2/8/05; v.1.2
Alliance Semiconductor
P. 9 of 19
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10
μ
A.
*
V
IH
max < VDD +1.5V for pulse width less than 0.2 X t
CYC
**
V
IL
min = -1.5 for pulse width less than 0.2 X t
CYC
I
DD
operating conditions and maximum limits
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
|I
LO
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
Address and control pins
-2
2
μA
Output leakage current
-2
2
μA
Input high (logic 1) voltage
V
IH
2*
V
DD
+0.3
V
DDQ
+0.3
0.8
V
I/O pins
2*
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
V
I/O pins
-0.5**
0.8
Output high voltage
V
OH
V
OL
I
OH
= –4 mA, V
DDQ
= 3.135V
I
OL
= 8 mA, V
DDQ
= 3.465V
2.4
V
Output low voltage
0.4
V
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|I
LI
|
|I
LO
|
V
DD
= Max, 0V < V
IN
< V
DD
OE
V
IH
, V
DD
= Max, 0V < V
OUT
< V
DDQ
Address and control pins
-2
2
μA
Output leakage current
-2
2
μA
Input high (logic 1) voltage
V
IH
1.7*
V
DD
+0.3
V
DDQ
+0.3
0.7
V
I/O pins
1.7*
V
Input low (logic 0) voltage
V
IL
Address and control pins
-0.3**
V
I/O pins
-0.3**
0.7
V
Output high voltage
V
OH
V
OL
I
OH
= –4 mA, V
DDQ
= 2.375V
I
OL
= 8 mA, V
DDQ
= 2.625V
1.7
V
Output low voltage
0.7
V
Parameter
Sym
Conditions
-65
-75
-80
-10
Unit
Operating power supply current
1
1 I
CC
given with no output loading. I
CC
increases with faster cycle times and greater output loading.
I
CC
CE0 < V
IL
, CE1 > V
IH
, CE2 < V
IL
, f = f
Max
,
I
OUT
= 0 mA, ZZ
<
V
IL
All V
IN
0.2V or >
V
DD
– 0.2V,
Deselected,
f = f
Max
, ZZ
<
V
IL
Deselected, f = 0, ZZ
<
0.2V,
all V
IN
0.2V or
V
DD
– 0.2V
Deselected, f = f
Max
, ZZ
V
DD
– 0.2V,
all V
IN
V
IL
or
V
IH
275
250
215
185
mA
Standby power supply current
I
SB
90
85
75
75
mA
I
SB1
30
30
30
30
I
SB2
30
30
30
30
相关PDF资料
PDF描述
AS7C3364FT32B-80TQI 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT32B-80TQIN 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-10TQCN 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-10TQI 3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-10TQIN 3.3V 64K x 32/36 Flow Through Synchronous SRAM
相关代理商/技术参数
参数描述
AS7C3364FT32B-80TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT32B-80TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-10TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-10TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM
AS7C3364FT36B-10TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Flow Through Synchronous SRAM