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参数资料
| 型号： | ASI10514 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/1页 |
| 文件大小： | 17K |
| 代理商： | ASI10514 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 50 mA
BV
CES
I
C
= 100 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 32 V
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
65
3.5
15
UNITS
V
V
V
mA
---
20
---
P
G
η
C
V
CC
= 28 V P
OUT
= 100 W f = 1.2 to 1.4
GHz
6.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
ALR100
DESCRIPTION:
The
ASI ALR100
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
13.5 A
V
CC
32 V
P
DISS
270 W @ T
C
= 25
O
C
-65
O
C to +250
O
C
T
J
T
STG
-65
O
C to +200
O
C
θ
JC
0.55
O
C/W
PACKAGE STYLE .400 2L FLG
ORDER CODE: ASI10514
MINIMUM
inches / mm
.395 / 10.03
.140 / 3.56
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.230 / 5.84
.407 / 10.34
H
.118 / 3.00
.131 / 3.33
DIM
K
L
I
J
.386 / 9.80
O
P
Q
R
N
M
.450 / 11.43
.050 / 1.27
.110 / 2.80
.193 / 4.90
.003 / 0.08
.006 / 0.15
.900 / 22.86
.650 / 16.51
.063 / 1.60
.125 / 3.18
.170 / 4.32
.062 / 1.58
.405 / 10.29
.110 / 2.80
J
P
G
M
C
B
D
H
F
N
Q
I
O
K
E
.120
A
.062 x 45°
R
L
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