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参数资料
| 型号： | AT28C64E-15TC |
| 厂商： | ATMEL CORP |
| 元件分类： | DRAM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 8K X 8 EEPROM 5V, 150 ns, PDSO28 |
| 封装： | PLASTIC, TSOP-28 |
| 文件页数： | 2/11页 |
| 文件大小： | 312K |
| 代理商： | AT28C64E-15TC |
Description
(Continued)
Block Diagram
The AT28C64 is accessed like a Static RAM for the read
or write cycles without the need for external components.
During a byte write, the address and data are latched in-
ternally, freeing the microprocessor address and data bus
for other operations. Following the initiation of a write cy-
cle, the device will go to a busy state and automatically
clear and write the latched data using an internal control
timer. The device includes two methods for detecting the
end of a write cycle, level detection of RDY/BUSY (unless
pin 1 is N.C.) and DATA POLLING of I/O
7
. Once the end
of a write cycle has been detected, a new access for a
read or write can begin.
The CMOS technology offers fast access times of 120 ns
at low power dissipation. When the chip is deselected the
standby current is less than 100
μ
A.
Atmel’s 28C64 has additional features to ensure high
quality and manufacturability. The device utilizes error cor-
rection internally for extended endurance and for im-
proved data retention characteristics. An extra 32-bytes of
E
2
PROM are available for device identification or tracking.
Temperature Under Bias.................-55°C to +125°C
Storage Temperature......................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
2-194
AT28C64/X
相关PDF资料 |
PDF描述 |
|---|---|
| AT28C64E-15TI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-20JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-20JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-20PC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28C64E-20PI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28C64E-15TI | 功能描述:电可擦除可编程只读存储器 64K HI-ENDURANCE w/RDYBSY - 150NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28C64E-20DC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
| AT28C64E-20DI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
| AT28C64E-20DM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
| AT28C64E-20FC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 EEPROM |
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