参数资料
型号: ATF-52189-TR1
元件分类: 小信号晶体管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装: LEAD FREE PACKAGE-3
文件页数: 1/18页
文件大小: 2247K
代理商: ATF-52189-TR1
ATF-52189
High Linearity Mode
[1] Enhancement
Pseudomorphic HEMT in SOT 89 Package
Data Sheet
Features
Single voltage operation
High Linearity and P1dB
Low Noise Figure
Excellent uniformity in product specifications
SOT 89 standard package
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-Reel packaging option available
Specifications
2 GHz, 4.5V, 200 mA (Typ.)
42 dBm Output IP3
27 dBm Output Power at 1dB gain compression
1.50 dB Noise Figure
16.0 dB Gain
55% PAE at P1dB
LFOM[3] 12.5 dB
Applications
Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for
Cellular/PCS and WCDMA wireless infrastructure
Driver Amplifier for WLAN, WLL/RLL and MMDS applications
General purpose discrete E-pHEMT for other high linearity
applications
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating
the need of negative gate voltage associated with conventional depletion
mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
Description
Avago Technologies’s ATF-52189 is a single-voltage
high linearity, low noise E-pHEMT FET packaged in a
low cost surface mount SOT89 package. The device is
ideal as a medium-power, high-linearity amplifier. Its
operating frequency range is from 50 MHz to 6 GHz.
ATF-52189 is ideally suited for Cellular/PCS and
WCDMA wireless infrastructure, WLAN, WLL and
MMDS application, and general purpose discrete
E-pHEMT amplifiers which require medium power and
high linearity. All devices are 100% RF and DC tested.
Pin Connections and Package Marking
Notes:
Package marking provides orientation and identification:
“2G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
2GX
Bottom View
DS
S
G
Top View
GS
S
D
相关PDF资料
PDF描述
ATF-521P8-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
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ATF-521P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相关代理商/技术参数
参数描述
ATF-52189-TR2 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-521P8 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package
ATF-521P8-BLK 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-521P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-521P8-BLKG 制造商:Avago Technologies 功能描述: