参数资料
型号: ATF-521P8-TR1
元件分类: 小信号晶体管
英文描述: L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封装: 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
文件页数: 1/23页
文件大小: 319K
代理商: ATF-521P8-TR1
ATF-521P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’ ATF521P8 is a singlevoltage high
linearity, low noise EpHEMT housed in an 8lead JEDEC
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a mediumpower, highlinearity
amplifier. Its operating frequency range is from 50 MHz
to 6 GHz.
The thermally efficient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over
300 years at a mounting temperature of +85°C. All
devices are 100% RF & DC tested.
Pin Connections and Package Marking
Features
Single voltage operation
High linearity and P1dB
Low noise figure
Excellent uniformity in product specifications
Small package size: 2.0 x 2.0 x 0.75 mm3
Point MTTF > 300 years[2]
MSL1 and leadfree
Tapeandreel packaging option available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
42 dBm output IP3
26.5 dBm output power at 1 dB gain compression
1.5 dB noise figure
17 dB Gain
12.5 dB LFOM[4]
Applications
FrontendLNAQ2andQ3,driverorpredriveramplifier
for Cellular/PCS and WCDMA wireless infrastructure
DriveramplifierforWLAN,WLL/RLLandMMDSapplica
tions
GeneralpurposediscreteEpHEMTforotherhighlinear
ity applications
Note:
Package marking provides orientation and identification
“2P” = Device Code
“x” = Month code indicates the month of manufacture.
Note:
1. Enhancement mode technology employs a single positive V
gs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRPN
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
2Px
Top View
Pin 8
Source
(Thermal/RF
Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Technologies Application Note
A004R: Electrostatic Discharge Damage and Control.
相关PDF资料
PDF描述
ATF-521P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-53189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-53189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-531P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相关代理商/技术参数
参数描述
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