参数资料
| 型号： | LT1965EQ-3.3#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 22/22页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V 1.1A 5-DDPAK |
| 产品培训模块： | More Information on LDOs |
| 标准包装： | 50 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 最高 20V |
| 电压 - 压降（标准）： | 0.31V @ 1.1A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 1.1A |
| 电流 - 限制（最小）： | 1.2A |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-6，D²Pak（5 引线+接片），TO-263BA |
| 供应商设备封装： | D2PAK-5 |
| 包装： | 管件 |
| 产品目录页面： | 1330 (CN2011-ZH PDF) |
LT1965 Series
TYPICAL APPLICATION
Adjustable Current Source
V IN > 2.7V
+
C1
10μF
R1
1k
LT1004-1.2
R2
80.6k
R5, 0.01?
R4 R6
2.2k 2.2k
C3
1μF
LT1965
IN OUT
SHDN ADJ
GND
R8
100k
+
LOAD
C4
10μF
NOTE: ADJUST R1 FOR
0A TO 1.1A CONSTANT-CURRENT
R3
2k
C2
3.3μF
2
3
–
+
1/2
LT1366
8
4
1
1965 TA04
R7
470?
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
700mA, Micropower, LDO
100mA, Low Noise Micropower, LDO
150mA, Low Noise Micropower, LDO
500mA, Low Noise Micropower, LDO
3A, Low Noise, Fast Transient Response,
LDO
150mA, Very Low Drop-Out LDO
300mA, Low Noise Micropower, LDO
V IN : 4.2V to 30V, V OUT(MIN) = 3.8V, V DO = 0.40V, I Q = 50μA, I SD = 16μA;
DD, SOT-223, S8, TO220-5 and TSSOP20 Packages
V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.30V, I Q = 20μA, I SD = < 1μA,
Low Noise < 20μV RMS , Stable with 1μF Ceramic Capacitors, ThinSOT? Package
V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.30V, I Q = 25μA, I SD = < 1μA,
Low Noise < 20μV RMS , MS8 Package
V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.30V, I Q = 30μA, I SD = < 1μA,
Low Noise < 20μV RMS , S8 Package
V IN : 2.7V to 20V, V OUT(MIN) = 1.21V, V DO = 0.34V, I Q = 1mA, I SD = < 1μA, Low Noise
< 40μV RMS , “A” Version Stable with Ceramic Capacitors, DD and TO220-5 Packages
V IN : 1.6V to 6.5V, V OUT(MIN) = 1.25V, V DO = 0.08V, I Q = 35μA, I SD = < 1μA,
Low Noise < 60μV RMS , ThinSOT? Package
V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.27V, I Q = 30μA, I SD = < 1μA,
Low Noise < 20μV RMS , MS8 Package
1.5A, Low Noise, Fast Transient Response, V IN : 2.1V to 20V, V OUT(MIN) = 1.21V, V DO = 0.34V, I Q = 1mA, I SD = < 1μA,
LDO Low Noise < 40μV RMS , “A” Version Stable with Ceramic Capacitors;
DD, TO220-5, SOT-223 and S8 Packages
100mA, Low Voltage V DO , V IN(MIN) = 0.9V, V IN : 0.9V to 10V, V OUT(MIN) = 0.20V, V DO = 0.15V, I Q = 120μA, I SD = 3μA, DFN and
LDO MS8 Packages
500mA, Low Voltage V DO , V IN(MIN) = 0.9V, V IN : 0.9V to 10V, V OUT(MIN) = 0.20V, V DO = 0.16V, I Q = 120μA, I SD = 3μA, DFN and
LDO S8 Packages
Dual, 2x 100mA, Low Noise Micropower,
LDO
Dual, 100mA/500mA, Low Noise
Micropower, LDO
Dual, 2x 100mA, Low Noise Micropower,
LDO with Independent Inputs
V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.30V, I Q = 40μA, I SD = < 1μA, DFN and
MS10 Packages
V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.30V, I Q = 60μA, I SD = < 1μA, DFN and
TSSOP Packages
V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.30V, I Q = 25μA, I SD = < 1μA,
Low Noise < 20μV RMS , DFN and MS10 Packages
Dual, 100mA/500mA, Low Noise V IN : 1.8V to 20V, V OUT(MIN) = 1.22V, V DO = 0.30V, I Q = 30μA, I SD = < 1μA,
Micropower, LDO with Independent Inputs Low Noise < 20μV RMS , DFN and TSSOP Packages
1.1A Parallelable, Low Noise, Low Dropout 300mV Dropout Voltage (2-Supply Operation), Low Noise: 40μV RMS , V IN : 1.2V to 36V,
Linear Regulator V OUT : 0V to 35.7V, Current-Based Reference with 1-Resistor V OUT Set; Directly Parallelable
(No Op Amp Required), Stable with Ceramic Caps, TO-220, SOT-223, MSOP and 3mm ×
3mm DFN Packages; LT3080-1 Version Has Integrated Internal Ballast Resistor
1630 McCarthy Blvd., Milpitas, CA 95035-7417 Formore(408)432-1900 ● FAX:(408)434-0507 Corporation information
22 Linear Technology ● www.linear.com/LT1965 www.linear.com/LT1965
1965fb
LT 0813 REV B ? PRINTED IN USA
? LINEAR TECHNOLOGY CORPORATION 2007
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