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参数资料
| 型号： | CAT24C256LI-GT3 |
| 英文描述： | 256-Kb I2C CMOS Serial EEPROM |
| 中文描述： | 256 - KB的的I2C的CMOS串行EEPROM |
| 文件页数： | 2/14页 |
| 文件大小： | 526K |
| 代理商： | CAT24C256LI-GT3 |
CAT24C256
2
Doc. No. 04, Rev. D
2007 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
AbSOluTE MAXIMuM RATIngS
(1)
Storage Temperature
Voltage on Any Pin with Respect to Ground
(2)
-65°C to +50°C
-0.5 V to +6.5 V
RElIAbIlITy CHARACTERISTICS
(3)
Symbol
N
END(4)
T
DR
Parameter
Endurance
Data Retention
Min
units
,000,000
00
Program/ Erase Cycles
Years
D.C. OPERATIng CHARACTERISTICS
V
CC
= .8 V to 5.5 V, T
A
= -40°C to 85°C, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Max
units
I
CC
Supply Current
Read or Write at 400 kHz
mA
I
SB
Standby Current
All I/O Pins at GND or V
CC
μA
I
L
I/O Pin Leakage
Pin at GND or V
CC
μA
V
IL
Input Low Voltage
-0.5
V
CC
x 0.3
V
V
IH
Input High Voltage
V
CC
x 0.7
V
CC
+ 0.5
V
V
OL
Output Low Voltage
V
CC
> 2.5 V, I
OL
= 3.0 mA
0.4
V
V
OL2
Output Low Voltage
V
CC
> .8 V, I
OL
= .0 mA
0.2
V
PIn IMPEDAnCE CHARACTERISTICS
T
A
= 25°C, f = 400 kHz, V
CC
= 5 V
Symbol
Parameter
Conditions
Min
Max
units
C
IN(3)
SDA I/O Pin Capacitance
V
IN
= 0 V
8
pF
C
IN(3)
Input Capacitance (other pins)
V
IN
= 0 V
6
pF
notes:
() Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than -.5 V or overshoot to no more than V
CC
+ .5 V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q00
and JEDEC test methods.
(4) Page Mode, V
CC
= 5 V, 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CAT24C256WE-GT3 | 制造商:ON Semiconductor 功能描述:256-KB I2C SERIAL CMOS EEPROM MEMORY SOIC-8 PKG, 3K/REEL - Tape and Reel |
| CAT24C256WGI | 制造商:Catalyst Semiconductor 功能描述: |
| CAT24C256WI-G | 功能描述:电可擦除可编程只读存储器 (32768x8) 256K RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| CAT24C256WI-G | 制造商:ON Semiconductor 功能描述:IC EEPROM 256KBIT SERIAL 400KHZ SOIC-8 制造商:ON Semiconductor 功能描述:IC, EEPROM, 256KBIT SERIAL 400KHZ SOIC-8 |
| CAT24C256WI-GT3 | 功能描述:电可擦除可编程只读存储器 256K-Bit I2C Serial CMOS 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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