参数资料
型号: CAT93C46SA-1.8TE13REVH
元件分类: PROM
英文描述: 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封装: SOIC-8
文件页数: 4/9页
文件大小: 1371K
代理商: CAT93C46SA-1.8TE13REVH
4
CAT93C46
Doc. No. 1087, Rev. L
A.C. TEST CONDITIONS
Input Rise and Fall Times
≤ 50ns
Input Pulse Voltages
0.4V to 2.4V
4.5V
≤ VCC ≤ 5.5V
Timing Reference Voltages
0.8V, 2.0V
4.5V
≤ VCC ≤ 5.5V
Input Pulse Voltages
0.2VCC to 0.7VCC
1.8V
≤ VCC ≤ 4.5V
Timing Reference Voltages
0.5VCC
1.8V
≤ VCC ≤ 4.5V
POWER-UP TIMING (1)(2)
Symbol
Parameter
Max
Units
tPUR
Power-up to Read Operation
1
ms
tPUW
Power-up to Write Operation
1
ms
NOTE:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
(3) The input levels and timing reference points are shown in “AC Test Conditions” table.
DEVICE OPERATION
The CAT93C46 is a 1024-bit nonvolatile memory in-
tended for use with industry standard microprocessors.
The CAT93C46 can be organized as either registers of
16 bits or 8 bits. When organized as X16, seven 9-bit
instructions control the reading, writing and erase opera-
tions of the device. When organized as X8, seven 10-bit
instructions control the reading, writing and erase
operations of the device. The CAT93C46 operates on
a single power supply and will generate on chip, the high
voltage required during any write operation.
Instructions, addresses, and write data are clocked into
the DI pin on the rising edge of the clock (SK). The DO
pin is normally in a high impedance state except when
reading data from the device, or when checking the
ready/busy status after a write operation.
The ready/busy status can be determined after the start
of a write operation by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that
the device is ready for the next instruction. If necessary,
the DO pin may be placed back into a high impedance
state during chip select by shifting a dummy “1” into the
DI pin. The DO pin will enter the high impedance state on
the falling edge of the clock (SK). Placing the DO pin into
the high impedance state is recommended in applica-
tions where the DI pin and the DO pin are to be tied
together to form a common DI/O pin.
The format for all instructions sent to the device is a
logical "1" start bit, a 2-bit (or 4-bit) opcode, 6-bit address
(an additional bit when organized X8) and for write
operations a 16-bit data field (8-bit for X8 organizations).
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the CAT93C46 will
come out of the high impedance state and, after sending
an initial dummy zero bit, will begin shifting out the data
addressed (MSB first). The output data bits will toggle on
the rising edge of the SK clock and are stable after the
specified time delay (tPD0 or tPD1).
Write
After receiving a WRITE command, address and the
data, the CS (Chip Select) pin must be deselected for a
minimum of tCSMIN. The falling edge of CS will start the
self clocking clear and data store cycle of the memory
location specified in the instruction. The clocking of the
SK pin is not necessary after the device has entered the
self clocking mode. The ready/busy status of the
CAT93C46 can be determined by selecting the device
and polling the DO pin. Since this device features Auto-
Clear before write, it is NOT necessary to erase a
memory location before it is written into.
Discontinued
Part
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