参数资料
型号: IXFN48N50Q
厂商: IXYS
文件页数: 1/4页
文件大小: 0K
描述: MOSFET N-CH 500V 48A SOT-227B
标准包装: 10
系列: HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 48A
开态Rds(最大)@ Id, Vgs @ 25° C: 100 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大): 4V @ 4mA
闸电荷(Qg) @ Vgs: 190nC @ 10V
输入电容 (Ciss) @ Vds: 7000pF @ 25V
功率 - 最大: 500W
安装类型: 底座安装
封装/外壳: SOT-227-4,miniBLOC
供应商设备封装: SOT-227B
包装: 管件
HiPerFET TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q g , High dv/dt
IXFN 44N50Q
IXFN 48N50Q
V DSS I D25 R DS(on)
500 V 44 A 120 m ?
500 V 48 A 100 m ?
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
V DSS
V DGR
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
dv/dt
P D
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
T C = 25 ° C 44N50
48N50
T C = 25 ° C, pulse width limited by T JM 44N50
48N50
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
500
500
± 20
± 30
44
48
176
192
48
60
2.5
15
500
V
V
V
V
A
A
A
A
A
mJ
mJ
V/ns
W
S
G
S
D
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
? IXYS advanced low Q g process
? Low gate charge and capacitances
- easier to drive
-faster switching
? Unclamped Inductive Switching (UIS)
rated
T J
T JM
T stg
V ISOL
M d
Weight
50/60 Hz, RMS t = 1 min
I ISOL ≤ 1 mA t=1s
Mounting torque
Terminal connection torque
-55 to +150
150
-55 to +150
2500
3000
1.5/13
1.5/13
30
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
? Low R DS (on)
? Fast intrinsic diode
? International standard package
? miniBLOC with Aluminium nitride
isolation for low thermal resistance
? Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
? Molding epoxies meet UL 94 V-0
flammability classification
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? DC-DC converters
? Battery chargers
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
500
2.0
T J = 25 ° C
T J = 125 ° C
4.0
± 100
100
2
V
V
nA
μ A
mA
? Switched-mode and resonant-mode
power supplies
? DC choppers
? Temperature and lighting controls
Advantages
? Easy to mount
R DS(on)
V GS = 10 V, I D = 0.5 I D25 44N50
48N50
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
120
100
?
?
? Space savings
? High power density
? 2003 IXYS All rights reserved
DS98715B(08/03)
相关PDF资料
PDF描述
YGM1 C513 THERM PTC MINI-BEAD 3MM 130C
6356-24 KIT ALLIG CLIP PATCH CORD 24"
YGM1 C512 THERM PTC MINI-BEAD 3MM 120C
YGM1 C510 THERM PTC MINI-BEAD 3MM 100C
CR4220S-0.5 XMITTER AC CRRNT 4-20MA 0-0.5AAC
相关代理商/技术参数
参数描述
CY28346OXCT 功能描述:时钟合成器/抖动清除器 NB clk for Intel 830M & 845 chipsets RoHS:否 制造商:Skyworks Solutions, Inc. 输出端数量: 输出电平: 最大输出频率: 输入电平: 最大输入频率:6.1 GHz 电源电压-最大:3.3 V 电源电压-最小:2.7 V 封装 / 箱体:TSSOP-28 封装:Reel
CY28346ZC 功能描述:时钟合成器/抖动清除器 NB clk for Intel 830M & 845 chipsets RoHS:否 制造商:Skyworks Solutions, Inc. 输出端数量: 输出电平: 最大输出频率: 输入电平: 最大输入频率:6.1 GHz 电源电压-最大:3.3 V 电源电压-最小:2.7 V 封装 / 箱体:TSSOP-28 封装:Reel
CY28346ZC-2 制造商:Rochester Electronics LLC 功能描述:FTG FOR INTEL 830M AND 845 CHIPSETS (CK-408) - Bulk
CY28346ZC-2T 制造商:CYPRESS 制造商全称:Cypress Semiconductor 功能描述:Clock Synthesizer with Differential CPU Outputs
CY28346ZCT 功能描述:时钟合成器/抖动清除器 NB clk for Intel 830M & 845 chipsets RoHS:否 制造商:Skyworks Solutions, Inc. 输出端数量: 输出电平: 最大输出频率: 输入电平: 最大输入频率:6.1 GHz 电源电压-最大:3.3 V 电源电压-最小:2.7 V 封装 / 箱体:TSSOP-28 封装:Reel