参数资料
型号: CY7C1148V18-333BZC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
中文描述: 1M X 18 DDR SRAM, 0.45 ns, PBGA165
封装: 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件页数: 6/27页
文件大小: 969K
代理商: CY7C1148V18-333BZC
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Document Number: 001-06621 Rev. *C
Page 6 of 27
Pin Definitions
Pin Name
IO
Pin Description
DQ
[x:0]
Input Output-
Synchronous
Data Input Output Signals
. Inputs are sampled on the rising edge of K and K clocks when write
operations are valid. These pins drive out the requested data when a read operation is active. Valid
data is driven out on the rising edge of both the K and K clocks when read operations are active.
When read access is deselected, Q
[x:0]
are automatically tri-stated.
CY7C1146V18
DQ
[7:0]
CY7C1157V18
DQ
[8:0]
CY7C1148V18
DQ
[17:0]
CY7C1150V18
DQ
[35:0]
Synchronous Load
. This input is brought LOW when a bus cycle sequence is to be defined. This
definition includes address and read/write direction. All transactions operate on a burst of two data.
LD must meet the setup and hold times around edge of K.
LD
Input-
Synchronous
NWS
0
, NWS
1
,
Input-
Synchronous
Nibble Write Select 0, 1
Active LOW
.(
CY7C1146V18
Only
) Sampled on the rising edge of the K
and K clocks when the write operation is active. It is used to select the nibble that is written into the
device NWS
0
controls D
[3:0]
and NWS
1
controls D
[7:4]
.
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write
Select causes the corresponding nibble of data to be ignored and not written into the device.
BWS
0
, BWS
1
,
BWS
2
, BWS
3
Input-
Synchronous
Byte Write Select 0, 1, 2, and 3
Active LOW
. Sampled on the rising edge of the K and K clocks
when the Write operation is active. It is used to select the byte that is written into the device when
the current portion of the write operation is active. Bytes not written remain unaltered.
CY7C1157V18
BWS
0
controls D
[8:0]
CY7C1148V18
BWS
0
controls D
[8:0]
, and BWS
1
controls D
[17:9].
CY7C1148V18
BWS
0
controls D
[8:0]
, BWS
1
controls D
[17:9]
, BWS
2
controls D
[26:18]
, and BWS
3
controls D
[35:27]
.
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
causes the corresponding byte of data to be ignored and not written into the device.
A
Input-
Synchronous
Address Inputs
. Sampled on the rising edge of the K clock during active read and write operations.
These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 2M x 8 (two arrays each of1M x 8) for CY7C1146V18, 2M x 9 (two arrays each of 1M
x 9) for CY7C1157V18, 1M x 18 (two arrays each of 512K x 18) for CY7C1148V18, and 512K x 36
(two arrays each of 256K x 18) for CY7C1150V18. All the address inputs are ignored when the
appropriate port is deselected.
R/W
Input-
Synchronous
Synchronous Read/Write Input
. When LD is LOW, this input designates the access type (read
when R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold
times around edge of K.
QVLD
Valid Output
Indicator
Valid Output Indicator
. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and
CQ.
K
Input-
Clock
Positive Input Clock Input
. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q
[x:0]
when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input-
Clock
Negative Input Clock Input
. K is used to capture synchronous inputs being presented to the device
and to drive out data through Q
[x:0]
when in single clock mode.
CQ
Clock Output
Synchronous Echo Clock Outputs
. This is a free running clock and is synchronized to the input
clock (K) of the DDR-II+. The timings for the echo clocks are shown in the
“Switching Characteristics”
on page 22
.
CQ
Clock Output
Synchronous Echo Clock Outputs
. This is a free running clock and is synchronized to the input
clock (K) of the DDR-II+. The timings for the echo clocks are shown in the
“Switching Characteristics”
on page 22
.
ZQ
Input
Output Impedance Matching Input
. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q
[x:0]
output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, connect this pin directly to V
DDQ
, which enables
the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
[+] Feedback
相关PDF资料
PDF描述
CY7C1148V18-333BZI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-333BZXC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-333BZXI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-375BZC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1148V18-375BZI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
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