| 型号 | 厂商 | 描述 |
| irf520 2 3 4 5 6 7 8 9 |
意法半导体 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| irf520fi 2 3 4 5 6 7 8 9 |
意法半导体 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| irf530fp 2 3 4 5 |
意法半导体 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体管) |
| irf530 2 3 4 5 6 |
意法半导体 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| irf620fi 2 3 4 5 6 7 8 9 |
意法半导体 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| irf620 2 3 4 5 6 7 8 9 |
意法半导体 | N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) |
| irf630m 2 3 4 5 6 7 8 9 |
意法半导体 | N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET |
| irf630mfp 2 3 4 5 6 7 8 9 |
意法半导体 | N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET |
| irf630s 2 3 4 5 6 7 8 |
意法半导体 | N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET |
| irf630st4 2 3 4 5 6 7 8 |
意法半导体 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263AB |
| irf630 2 3 4 5 6 7 8 9 |
意法半导体 | N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| irf640fp 2 3 4 5 6 7 |
意法半导体 | N-Channel 200V-0.150Ω-18A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| irf640 2 3 4 5 6 7 |
意法半导体 | N-Channel 200V-0.150Ω-18A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| irf640s 2 3 4 5 6 7 8 |
意法半导体 | N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET |
| irf640s 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
| irf730 2 3 4 5 6 7 8 |
意法半导体 | N-Channel 400V-0.75Ω-5.5A - TO-220 PowerMESHTM MOSFET(N沟道功率MOSFET) |
| irf740st4 2 3 4 5 6 7 8 |
意法半导体 | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-263AB |
| irf740s 2 3 4 5 6 7 8 |
意法半导体 | N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) |
| irf9132 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irf9131 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irf9531 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irf9532 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irf9533 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irfp9130 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irfp9131 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irfp9132 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irfp9133 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irf9133 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irf9531 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | TRANSISTORS |
| irf9532 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | TRANSISTORS |
| irf9533 2 3 4 5 6 7 8 9 10 11 12 |
International Rectifier | TRANSISTORS |
| irf9530 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | P-CHANNEL POWER MOSFETS |
| irf9530nstrr 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
| irf9530 2 3 4 5 6 |
International Rectifier | TRANSISTORS |
| irf9530nl 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
| irf9530ns 2 3 4 5 6 |
International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
| irfbc30 2 3 4 5 6 7 8 |
意法半导体 | N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET |
| irfbc30 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A) |
| irfbc30as 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) |
| irfbc30l 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) |
| irfbc40 2 3 4 5 6 7 8 |
意法半导体 | N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET |
| irfbc40 2 3 4 5 6 7 8 |
Harris Corporation | 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs |
| irfbc40 2 3 4 5 6 7 8 |
INTERSIL CORP | CAP CER 1000PF 100V 20% X7R 0603 |
| irfbc40 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) |
| irfbc40a 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) |
| irfbc40as 2 3 4 5 6 7 8 |
International Rectifier | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) |
| irfbc42 2 3 4 5 6 7 |
Harris Corporation | 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs |
| irfd121 2 3 4 5 6 |
Harris Corporation | 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs |
| irfd122 2 3 4 5 6 |
Harris Corporation | 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs |
| irfd123 2 3 4 5 6 |
Harris Corporation | 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs |