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参数资料
| 型号： | 935268676165 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 锁存器 |
| 英文描述： | LVC/LCX/Z SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, INVERTED OUTPUT, PDSO5 |
| 封装： | PLASTIC, SOT-353, 5 PIN |
| 文件页数： | 14/16页 |
| 文件大小： | 70K |
| 代理商： | 935268676165 |
2001 Apr 04
7
Philips Semiconductors
Product specication
Single D-type ip-op; positive-edge trigger
74LVC1G80
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground=0V).
Note
1. All typical values are measured at VCC = 3.3 V and Tamb =25 °C.
SYMBOL
PARAMETER
TEST CONDITIONS
Tamb (°C)
UNIT
OTHER
VCC (V)
40 to +85
MIN.
TYP.(1)
MAX.
VIH
HIGH-level input
voltage
1.65 to 1.95
0.65
× VCC
V
2.3 to 2.7
1.7
V
2.7 to 3.6
2.0
V
4.5 to 5.5
0.7
× V
CC
V
VIL
LOW-level input
voltage
1.65 to 1.95
0.35
× VCC V
2.3 to 2.7
0.7
V
2.7 to 3.6
0.8
V
4.5 to 5.5
0.3
× V
CC
V
VOL
LOW-level output
voltage
VI =VIH or VIL; IO = 100 A
1.65 to 5.5
0.1
V
VI =VIH or VIL; IO = 4 mA
1.65
0.45
V
VI =VIH or VIL; IO = 8 mA
2.3
0.3
V
VI =VIH or VIL; IO = 12 mA
2.7
0.4
V
VI =VIH or VIL; IO = 24 mA
3.0
0.55
V
IV=VIH or VIL; IO = 32 mA
4.5
0.55
V
VOH
HIGH-level output
voltage
VI =VIH or VIL; IO = 100 A 1.65 to 5.5
VCC 0.1
V
VI =VIH or VIL; IO = 4 mA
1.65
1.2
V
VI =VIH or VIL; IO = 8 mA
2.3
1.9
V
VI =VIH or VIL; IO = 12 mA
2.7
2.2
V
VI =VIH or VIL; IO = 24 mA
3.0
2.3
V
VI =VIH or VIL; IO = 32 mA
4.5
3.8
V
ILI
input leakage
current
VI = 5.5 V or GND
3.6
±0.1
±5
A
Ioff
power OFF leakage
current
VI or VO = 5.5 V
0
±0.1
±10
A
ICC
quiescent supply
current
VI =VCC or GND; IO = 0
5.5
0.1
10
A
I
CC
additional
quiescent supply
current per input
pin
VI =VCC 0.6 V; IO = 0
2.3 to 5.5
5
500
A
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