元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
PUMH10,125 | NXP Semiconductors | TRANS ARRAY NPN/NPN SOT-363 | 0 | 12,000:$0.04233 |
PUMD9,165 | NXP Semiconductors | TRANS NPN/PNP 50V 100MA SOT363 | 20,000 | 10,000:$0.03386 |
PUMD9,135 | NXP Semiconductors | TRANS NPN/PNP 50V 100MA SOT363 | 0 | 20,000:$0.04233 |
PUMD9,165 | NXP Semiconductors | TRANS NPN/PNP 50V 100MA SOT363 | 0 | 20,000:$0.04233 |
PUMD9,115 | NXP Semiconductors | TRANS NPN/PNP 50V 100MA SOT363 | 14,535 | 1:$0.35000 10:$0.32100 25:$0.23080 100:$0.17950 250:$0.11280 500:$0.09612 1,000:$0.06549 |
PUMD9,115 | NXP Semiconductors | TRANS NPN/PNP 50V 100MA SOT363 | 14,535 | 1:$0.35000 10:$0.32100 25:$0.23080 100:$0.17950 250:$0.11280 500:$0.09612 1,000:$0.06549 |
PUMD9,115 | NXP Semiconductors | TRANS NPN/PNP 50V 100MA SOT363 | 12,000 | 3,000:$0.05700 6,000:$0.05000 15,000:$0.04200 30,000:$0.04000 75,000:$0.03700 150,000:$0.03200 |
类别: | 分离式半导体产品 |
---|---|
电流 - 集电极 (Ic)(最大): | 100mA |
电压 - 集电极发射极击穿(最大): | 50V |
电阻器 - 基极 (R1)(欧): | 2.2k |
电阻器 - 发射极 (R2)(欧): | 47k |
在某 Ic、Vce 时的最小直流电流增益 (hFE): | 100 @ 10mA,5V |
Ib、Ic条件下的Vce饱和度(最大): | 100mV @ 250µA,5mA |
电流 - 集电极截止(最大): | 1µA |
频率 - 转换: | - |
功率 - 最大: | 300mW |
封装/外壳: | 6-TSSOP,SC-88,SOT-363 |
供应商设备封装: | 6-TSSOP |
包装: | 带卷 (TR) |