元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
PBSS9110X,135 | NXP Semiconductors | TRANS PNP 100V 1A LOW SAT SOT89 | 16,000 | 4,000:$0.11160 8,000:$0.10620 |
PBSS9110Z,135 | NXP Semiconductors | TRANS PNP 100V 1A SOT223 | 4,000 | 4,000:$0.14000 8,000:$0.13100 12,000:$0.12200 28,000:$0.11500 100,000:$0.11100 200,000:$0.10800 |
PBSS9110Z,135 | NXP Semiconductors | TRANS PNP 100V 1A SOT223 | 7,320 | 1:$0.44000 10:$0.37100 25:$0.32480 100:$0.27810 250:$0.24120 500:$0.20430 1,000:$0.15750 |
PBSS8110T,215 | NXP Semiconductors | TRANS NPN 100V 1A SOT23 | 6,000 | 3,000:$0.14000 6,000:$0.13100 15,000:$0.12200 30,000:$0.11500 75,000:$0.11300 150,000:$0.10800 |
PBSS8110T,215 | NXP Semiconductors | TRANS NPN 100V 1A SOT23 | 8,164 | 1:$0.44000 10:$0.37100 25:$0.32480 100:$0.27810 250:$0.24120 500:$0.20430 1,000:$0.15750 |
PBSS8110T,215 | NXP Semiconductors | TRANS NPN 100V 1A SOT23 | 8,164 | 1:$0.44000 10:$0.37100 25:$0.32480 100:$0.27810 250:$0.24120 500:$0.20430 1,000:$0.15750 |
类别: | 分离式半导体产品 |
---|---|
晶体管类型: | PNP |
电流 - 集电极 (Ic)(最大): | 1A |
电压 - 集电极发射极击穿(最大): | 100V |
Ib、Ic条件下的Vce饱和度(最大): | 320mV @ 100mA,1A |
电流 - 集电极截止(最大): | 100nA |
在某 Ic、Vce 时的最小直流电流增益 (hFE): | 150 @ 500mA,5V |
功率 - 最大: | 2W |
频率 - 转换: | 100MHz |
安装类型: | 表面贴装 |
封装/外壳: | TO-243AA |
供应商设备封装: | SOT-89-3 |
包装: | 带卷 (TR) |