| 元器件型号 | 厂商 | 描述 | 数量 | 价格 |
|---|---|---|---|---|
| PBHV8215Z,115 | NXP Semiconductors | TRANSISTOR NPN 150V 2A SOT223 | 1,546 | 1:$0.64000 10:$0.56000 25:$0.49440 100:$0.43090 250:$0.37512 500:$0.31930 |
| PBHV8215Z,115 | NXP Semiconductors | TRANSISTOR NPN 150V 2A SOT223 | 15,000 | 1,000:$0.19840 2,000:$0.18290 |
| PBHV9215Z,115 | NXP Semiconductors | TRANSISTOR PNP 150V 2A SOT223 | 1,000 | 1,000:$0.24800 2,000:$0.22500 5,000:$0.20900 10,000:$0.20200 25,000:$0.19400 50,000:$0.19100 100,000:$0.18600 |
| PBHV9215Z,115 | NXP Semiconductors | TRANSISTOR PNP 150V 2A SOT223 | 1,830 | 1:$0.64000 10:$0.56000 25:$0.49440 100:$0.43090 250:$0.37512 500:$0.31930 |
| PBHV9215Z,115 | NXP Semiconductors | TRANSISTOR PNP 150V 2A SOT223 | 1,830 | 1:$0.64000 10:$0.56000 25:$0.49440 100:$0.43090 250:$0.37512 500:$0.31930 |
| PBHV9215Z,115 | NXP Semiconductors | TRANSISTOR PNP 150V 2A SOT223 | 11,000 | 1,000:$0.19840 2,000:$0.18290 |
| 类别: | 分离式半导体产品 |
|---|---|
| 晶体管类型: | NPN |
| 电流 - 集电极 (Ic)（最大）: | 2A |
| 电压 - 集电极发射极击穿（最大）: | 150V |
| Ib、Ic条件下的Vce饱和度（最大）: | 280mV @ 400mA，2A |
| 电流 - 集电极截止（最大）: | 100nA |
| 在某 Ic、Vce 时的最小直流电流增益 (hFE): | 100 @ 1A，10V |
| 功率 - 最大: | 1.45W |
| 频率 - 转换: | 33MHz |
| 安装类型: | 表面贴装 |
| 封装/外壳: | TO-261-4，TO-261AA |
| 供应商设备封装: | SC-73 |
| 包装: | 剪切带 (CT) |