分离式半导体产品 PDTA123TT,235品牌、价格、PDF参数

PDTA123TT,235 • 品牌、价格
元器件型号 厂商 描述 数量 价格
PDTA123TT,235 NXP Semiconductors TRANS PNP W/RESISTOR SOT-23 0 30,000:$0.02124
PDTC114TT,215 NXP Semiconductors TRANS NPN 50V 100MA SOT23 9,000 3,000:$0.03000
6,000:$0.02700
15,000:$0.02400
30,000:$0.02100
75,000:$0.01900
150,000:$0.01600
PDTA114TU,115 NXP Semiconductors TRANS PNP 50V 100MA SOT323 450,000 3,000:$0.02407
6,000:$0.02171
15,000:$0.01888
30,000:$0.01699
75,000:$0.01510
150,000:$0.01392
PDTC114EK,115 NXP Semiconductors TRANS NPN 50V 100MA SOT346 0
PDTC114ET,235 NXP Semiconductors TRANS NPN 50V 100MA SOT23 6,614 1:$0.18000
10:$0.16700
25:$0.15200
100:$0.10940
250:$0.06444
500:$0.05346
1,000:$0.03646
2,500:$0.03104
5,000:$0.02797
PDTC114ET,215 NXP Semiconductors TRANS NPN 50V 100MA SOT23 11,335 1:$0.18000
10:$0.16700
25:$0.15200
100:$0.10940
250:$0.06444
500:$0.05346
1,000:$0.03646
PDTC114YE,135 NXP Semiconductors TRANS NPN 50V 100MA SOT416 0 30,000:$0.02124
PDTA123TT,235 • PDF参数
类别: 分离式半导体产品
电流 - 集电极 (Ic)(最大): 100mA
电压 - 集电极发射极击穿(最大): 50V
电阻器 - 基极 (R1)(欧): 2.2k
电阻器 - 发射极 (R2)(欧): -
在某 Ic、Vce 时的最小直流电流增益 (hFE): 30 @ 20mA,5V
Ib、Ic条件下的Vce饱和度(最大): 150mV @ 500µA,10mA
电流 - 集电极截止(最大): 1µA
频率 - 转换: -
功率 - 最大: 250mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: 带卷 (TR)