元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
FESB8BT-E3/45 | Vishay General Semiconductor | DIODE 8A 100V 35NS SGL TO263AB | 0 | 1,000:$0.55830 |
MBR16H45-E3/45 | Vishay General Semiconductor | DIODE SCHOTT 10A 45V SGL TO220-2 | 0 | 1,000:$0.55665 |
MBRF1045HE3/45 | Vishay General Semiconductor | DIODE SCHOTT 10A 45V SGL TO220-2 | 0 | 1,000:$0.55485 |
MBRF1035HE3/45 | Vishay General Semiconductor | DIODE SCHOTT 10A 35V SGL TO220-2 | 0 | 1,000:$0.55485 |
MBRF1035-E3/45 | Vishay General Semiconductor | DIODE SCHOTT 10A 35V SGL TO220-2 | 0 | 1,000:$0.55485 |
MBRB7H60-E3/81 | Vishay General Semiconductor | DIODE SCHOTTKY 7.5A 60V TO263AB | 0 | 800:$0.55328 |
MBRB7H50-E3/81 | Vishay General Semiconductor | DIODE SCHOTTKY 7.5A 50V TO263AB | 0 | 800:$0.55328 |
MBRB7H45-E3/81 | Vishay General Semiconductor | DIODE SCHOTTKY 7.5A 45V TO263AB | 0 | 800:$0.55328 |
类别: | 分离式半导体产品 |
---|---|
二极管类型: | 标准 |
电压 - (Vr)(最大): | 100V |
电流 - 平均整流 (Io): | 8A |
电压 - 在 If 时为正向 (Vf)(最大): | 950mV @ 8A |
速度: | 快速恢复 = 200mA(Io) |
反向恢复时间(trr): | 35ns |
电流 - 在 Vr 时反向漏电: | 10µA @ 100V |
电容@ Vr, F: | - |
安装类型: | 表面贴装 |
封装/外壳: | TO-263-3,D²Pak(2 引线+接片),TO-263AB |
供应商设备封装: | TO-263AB |
包装: | 管件 |