分离式半导体产品 BAS19,215品牌、价格、PDF参数

BAS19,215 • 品牌、价格
元器件型号 厂商 描述 数量 价格
BAS19,215 NXP Semiconductors DIODE GEN-PURP 120V 200MA SOT-23 18,000 3,000:$0.01877
6,000:$0.01693
15,000:$0.01472
BAS19,215 NXP Semiconductors DIODE GEN-PURP 120V 200MA SOT-23 34,613 1:$0.14000
10:$0.13000
25:$0.11840
100:$0.08530
250:$0.05024
500:$0.04168
1,000:$0.02843
BAS19,215 NXP Semiconductors DIODE GEN-PURP 120V 200MA SOT-23 33,000 3,000:$0.02300
6,000:$0.02100
15,000:$0.01800
30,000:$0.01700
75,000:$0.01500
150,000:$0.01200
BAS19,235 NXP Semiconductors DIODE GEN-PURP 120V 200MA SOT-23 0 30,000:$0.01656
BAS16T,115 NXP Semiconductors DIODE 100V 155MA SC-75 30,000 3,000:$0.01877
6,000:$0.01693
15,000:$0.01472
30,000:$0.01325
BAS16T,115 NXP Semiconductors DIODE 100V 155MA SC-75 35,345 1:$0.14000
10:$0.13000
25:$0.11840
100:$0.08530
250:$0.05024
500:$0.04168
1,000:$0.02843
BAS16T,115 NXP Semiconductors DIODE 100V 155MA SC-75 35,345 1:$0.14000
10:$0.13000
25:$0.11840
100:$0.08530
250:$0.05024
500:$0.04168
1,000:$0.02843
BAS19,215 • PDF参数
类别: 分离式半导体产品
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 200mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 100nA @ 100V
电容@ Vr, F: 5pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: TO-236AB
包装: 带卷 (TR)