元器件型号 | 厂商 | 描述 | 数量 | 价格 |
---|---|---|---|---|
BAS19,215 | NXP Semiconductors | DIODE GEN-PURP 120V 200MA SOT-23 | 18,000 | 3,000:$0.01877 6,000:$0.01693 15,000:$0.01472 |
BAS19,215 | NXP Semiconductors | DIODE GEN-PURP 120V 200MA SOT-23 | 34,613 | 1:$0.14000 10:$0.13000 25:$0.11840 100:$0.08530 250:$0.05024 500:$0.04168 1,000:$0.02843 |
BAS19,215 | NXP Semiconductors | DIODE GEN-PURP 120V 200MA SOT-23 | 33,000 | 3,000:$0.02300 6,000:$0.02100 15,000:$0.01800 30,000:$0.01700 75,000:$0.01500 150,000:$0.01200 |
BAS19,235 | NXP Semiconductors | DIODE GEN-PURP 120V 200MA SOT-23 | 0 | 30,000:$0.01656 |
BAS16T,115 | NXP Semiconductors | DIODE 100V 155MA SC-75 | 30,000 | 3,000:$0.01877 6,000:$0.01693 15,000:$0.01472 30,000:$0.01325 |
BAS16T,115 | NXP Semiconductors | DIODE 100V 155MA SC-75 | 35,345 | 1:$0.14000 10:$0.13000 25:$0.11840 100:$0.08530 250:$0.05024 500:$0.04168 1,000:$0.02843 |
BAS16T,115 | NXP Semiconductors | DIODE 100V 155MA SC-75 | 35,345 | 1:$0.14000 10:$0.13000 25:$0.11840 100:$0.08530 250:$0.05024 500:$0.04168 1,000:$0.02843 |
类别: | 分离式半导体产品 |
---|---|
二极管类型: | 标准 |
电压 - (Vr)(最大): | 100V |
电流 - 平均整流 (Io): | 200mA(DC) |
电压 - 在 If 时为正向 (Vf)(最大): | 1.25V @ 200mA |
速度: | 小信号 =< 200mA(Io),任意速度 |
反向恢复时间(trr): | 50ns |
电流 - 在 Vr 时反向漏电: | 100nA @ 100V |
电容@ Vr, F: | 5pF @ 0V,1MHz |
安装类型: | 表面贴装 |
封装/外壳: | TO-236-3,SC-59,SOT-23-3 |
供应商设备封装: | TO-236AB |
包装: | 带卷 (TR) |