分离式半导体产品 NVD5807NT4G品牌、价格、PDF参数
NVD5807NT4G • 品牌、价格
| 元器件型号 |
厂商 |
描述 |
数量 |
价格 |
| NVD5807NT4G |
ON Semiconductor |
MOSFET N-CH 40V 23A DPAK |
0 |
2,500:$0.20801
|
| MCH6337-TL-H |
ON Semiconductor |
MOSFET P-CH 20V 4.5A MCPH6 |
0 |
3,000:$0.20708
|
| MCH6336-TL-H |
ON Semiconductor |
MOSFET P-CH 12V 5A MCPH6 |
0 |
3,000:$0.20708
|
| NTMFS4847NAT3G |
ON Semiconductor |
MOSFET N-CH 30V 11.5A SO-8FL |
0 |
5,000:$0.31050
|
| SCH1433-TL-H |
ON Semiconductor |
MOSFET N-CH 20V 3.5A SCH6 |
0 |
5,000:$0.30753
|
| MCH3474-TL-E |
ON Semiconductor |
MOSFET N-CH 4A 30V MCPH3 |
0 |
3,000:$0.30600
|
| NVD4815NT4G |
ON Semiconductor |
MOSFET N-CH 30V 6.9A DPAK-4 |
0 |
2,500:$0.19592
|
| CPH3360-TL-H |
ON Semiconductor |
MOSFET P-CH 30V 1.6A CPH3 |
0 |
3,000:$0.18895
|
| CPH3351-TL-H |
ON Semiconductor |
MOSFET P-CH 60V 1.8A CPH3 |
0 |
3,000:$0.18755
|
NVD5807NT4G • PDF参数
| 类别: |
分离式半导体产品
|
| FET 型: |
MOSFET N 通道，金属氧化物
|
| FET 特点: |
标准
|
| 漏极至源极电压(Vdss): |
60V
|
| 电流 - 连续漏极(Id) @ 25° C: |
18A
|
| 开态Rds（最大）@ Id, Vgs @ 25° C: |
5.7 毫欧 @ 48A，10V
|
| Id 时的 Vgs(th)（最大）: |
4V @ 250µA
|
| 闸电荷(Qg) @ Vgs: |
82nC @ 10V
|
| 输入电容 (Ciss) @ Vds: |
6000pF @ 25V
|
| 功率 - 最大: |
4.1W
|
| 安装类型: |
表面贴装
|
| 封装/外壳: |
TO-252-3，DPak（2 引线+接片），SC-63
|
| 供应商设备封装: |
D-Pak
|
| 包装: |
带卷 (TR)
|